Direct Imaging of Point Defect Configurations for Au Inside Si Nanowires

K van Benthem,S-H Oh,AY Borisevich,W Luo,P Werner,ND Zakharov,ST Pantelides,SJ Pennycook

DOI: https://doi.org/10.1017/s1431927608087357

2008-01-01

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

What problem does this paper attempt to address?

Point defect configurations of supersaturated Au atoms inside Si nanowires.

Sang Ho Oh,Klaus van Benthem,Sergio I Molina,Albina Y Borisevich,Weidong Luo,Peter Werner,Nikolai D Zakharov,Dhananjay Kumar,Sokrates T Pantelides,Stephen J Pennycook

DOI: https://doi.org/10.1021/nl072670+

IF: 10.8

2008-01-01

Nano Letters

Abstract:Aberration-corrected scanning transmission electron microscopy (STEM) is used to reveal individual Au atom configurations inside Si nanowires grown by Au-catalyzed vapor-liquid-solid (VLS) molecular beam epitaxy (MBE). We identify a substitutional and three distinct interstitial configurations, one of which has not been previously identified. We confirm the stability of the observed point defect configurations by density functional theory (DFT) calculations. The observed number densities of the various configurations are in accord with their calculated formation energies. The concentration of Au atoms is larger than the solubility limit, but the effect may be caused by the STEM beam.
In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

L-M Peng,Q Chen,JY Wang,MS Wang,ZY Zhang,CH Jin,XL Wei

DOI: https://doi.org/10.1017/s1431927606069510

IF: 4.0991

2006-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
In Situ Atomistic Observation of the Deformation Mechanism of Au Nanowires with Twin–twin Intersection

Shuchun Zhao,Qi Zhu,Xianghai An,Hua Wei,Kexing Song,Scott X. Mao,Jiangwei Wang

DOI: https://doi.org/10.1016/j.jmst.2020.03.044

2020-01-01

Journal of Material Science and Technology

Abstract:Twin–twin intersections are often observed in face-centered cubic (FCC) metallic nanostructures, which have important contributions to the plastic deformation and strengthening of FCC metals with low stacking fault energies. However, a deep insight into the underlying mechanism involved in the formation and evolution of twin–twin intersections remains largely lacking, especially in experiments. Here, by conducting the in situ straining experiments under high resolution transmission electron microscope (TEM), we directly visualize the dynamic evolution of a twin–twin intersection in Au nanowire at the nanoscale. It shows that dislocations in the incoming twin can either glide onto or transmit across the barrier twin via dislocation interaction with the twin boundary, resulting in the twin–twin intersection. Dynamic twinning and de-twinning of the twin–twin intersection govern the whole deformation of the nanowire. These findings reveal the dynamic behaviors of twin–twin intersection under mechanical loading, which benefits further exploration of FCC metals and engineering alloys with twin–twin intersection structures.
In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Lingyi Kong,Guang Cao,Haofei Zhou,Jiangwei Wang

DOI: https://doi.org/10.3390/cryst13081159

IF: 2.7

2023-01-01

Crystals

Abstract:Metallic nanowires (NW) usually exhibit unique physical, mechanical, and chemical properties compared to their bulk counterparts. Despite extensive research on their mechanical behavior, the atomic-scale deformation mechanisms of metallic nanowires remain incompletely understood. In this study, we investigate the deformation behavior of Au nanowires embedded with a longitudinal twin boundary (TB) under different loading rates using in situ nanomechanical testing integrated with atomistic simulations. The Au nanowires exhibit a recoverable bending strain of up to 27.5% with the presence of TBs. At low loading rates, the recoverable bending is attributed to the motion of stacking faults (SFs) and their interactions with TBs. At higher loading rates, the formation of high-angle grain boundaries and their reversible migration become dominant in Au nanowires. These findings enhance our understanding of the bending behavior of metallic nanowires, which could inspire the design of nanodevices with improved fatigue resistance and a large recoverable strain capacity.
Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Stephen J. Pennycook,María Varela del Arco,Andrew R. Lupini,Albina Y. Borisevich,Weidong Luo,D. Kumar,Sang Ho Oh,Per‐Erik Werner,N. D. Zakharov,Sergio I Molina Rubio,Klaus van Benthem,Sergey N. Rashkeev,Kelli Griffin,Kannan M. Krishnan,Sokrates T. Pantelides

2008-01-01

Abstract:The successful correction of aberrations in scanning transmission electron microscopy (STEM) has improved lateral resolution by more than a factor of two [1], brought greatly enhanced sensitivity for imaging individual atoms, and depth resolution of a few nanometers [2-4]. In zone axis crystals, columnar channeling tends to reduce the depth resolution, and image simulations are necessary to establish the depth sensitivity [5]. To illustrate this capability, images from Si nanowires grown by a Au-catalyzed vapour-liquid-solid method will be presented [6]. A high density of Au atoms are seen not only on the surface of the nanowires, but, by changing focus, are seen also in the bulk of the nanowire, as shown in Fig. 1. The gold atoms move under the influence of the beam, and may not be present in the as-grown material. However, substitutional and three interstitial configurations are found, which are confirmed by density functional calculations to be stable (substitutional) or metastable (interstitial) sites. Furthermore, the number density of the different configurations correlates with their calculated defect formation energies. As a second example of the identification of a point defect complex, the origin of ferromagnetism in Co-doped anatase will be shown by a combination of imaging, EELS andmore » theory to be a Co-Ti+3-VO complex [7].« less
Direct Imaging of Core-shell Structure in Ag-Au Nanoparticles

Ziyou Li,Jun Yuan,Yu Chen,Richard E. Palmer,J. P. Wilcoxon

DOI: https://doi.org/10.1017/s1431927605508316

IF: 4.0991

2005-01-01

Microscopy and Microanalysis

Abstract:Extract HTML view is not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button. Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005
Identification of active atomic defects in a monolayered tungsten disulphide nanoribbon

Zheng Liu,Kazu Suenaga,Zhiyong Wang,Zujin Shi,Eiji Okunishi,Sumio Iijima

DOI: https://doi.org/10.1038/ncomms1224

IF: 16.6

2011-01-01

Nature Communications

Abstract:Edge structures and atomic defects can significantly affect the physical and chemical properties of low-dimensional materials, such as nanoribbons, and therefore merit a thorough investigation at the atomic scale. Here, we successfully discriminate single atoms on a monolayered tungsten disulphide nanoribbon by means of time-resolved annular dark-field imaging and spatially resolved electron energy-loss spectroscopy. We unambiguously identify and successfully visualize in motion atomic defects, such as vacancies and edge atoms, using scanning transmission electron microscopy. We also report a direct observation of slip deformation in the nanoribbons and present evidence demonstrating that the deformation process involves the migration of vacancies and rearrangement of tungsten atoms. Single-atom defects are successfully observed for the first time during plastic deformation.
Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Zixue Su,Calum Dickinson,Yuting Wan,Zongli Wang,Yewu Wang,Jian Sha,Wuzong Zhou

DOI: https://doi.org/10.1039/b925198g

IF: 3.756

2010-01-01

CrystEngComm

Abstract:Si nanowires were fabricated using Au nanoparticles as catalyst, either templated by porous anodic aluminium oxide films or on a smooth substrate of Si(100). The growth orientation of the nanowires and longitudinal planar defects such as twin defects and stacking faults were investigated using HRTEM. It was proposed that the nanowire growth was thermodynamically controlled with a slow growth rate and the growth orientation was normally the [111] zone axis of the cubic Si. When the growth rate was fast, the nanowire growth was kinetically controlled, leading to a growth orientation along the [112] zone axis. The formation mechanisms of various defects, such as twin defects, stacking faults and antiphase boundaries, are discussed.
Imaging of Optically Active Defects with Nanometer Resolution

Jiandong Feng,Hendrik Deschout,Sabina Caneva,Stephan Hofmann,Ivor Lončarić,Predrag Lazić,Aleksandra Radenovic

DOI: https://doi.org/10.1021/acs.nanolett.7b04819

2018-03-14

Abstract:Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a demand for developing direct optical imaging methods that would allow in situ characterization of individual defects with nanometer resolution. Here, we demonstrate the localization and quantitative counting of individual optically active defects in monolayer hexagonal boron nitride using single molecule localization microscopy. By exploiting the blinking behavior of defect emitters to temporally isolate multiple emitters within one diffraction limited region, we could resolve two defect emitters with a point-to-point distance down to ten nanometers. The results and conclusion presented in this work add unprecedented dimensions toward future applications of defects in quantum information processing and biological imaging.
Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC

Aaditya Bhat,Colin Gilgenbach,Junghwa Kim,James LeBeau

2024-09-12

Abstract:Robust atomic resolution structural characterization of point defects in 3D is a longstanding challenge for electron microscopy. Here, we evaluate multislice electron ptychography as a tool to carry out 3D atomic resolution characterization of point defects in silicon carbide as a model. Through multislice electron scattering simulations, subsequent ptychographic reconstructions, and data analysis, we show that intrinsic defects such as vacancies and substitutions beyond transition metals can be detected with a depth precision of approximately 0.1 nm with realistic sample and microscope conditions. Furthermore, the dependence of contrast at defect sites on electron energy and dose, as well as optimal acquisition parameters, are described. Overall, these results serve as a guidepost to experiments aiming to analyze point defects beyond extremely thin specimens or only heavy elements.

Materials Science
Precise Fabrication of Point Defects in Self-Assembled Three-Dimensional Macroporous Photonic Crystals.

RG Xie,T Sekiguchi,DS Li,D Yang,MH Jiang

DOI: https://doi.org/10.1021/jp056153w

IF: 3.466

2006-01-01

The Journal of Physical Chemistry B

Abstract:We demonstrate a new and simple method of precisely fabricating defects in three-dimensional (3D) CdS macroporous photonic crystals (PCs) with a variable pressure scanning electron microscope. Well-defined point defects, not only vacancies but also an impurity (a reduced-size sphere), were directly fabricated by electron-beam irradiation under a gas atmosphere. This provides a convenient and straightforward method of introducing various designed defects into 3D PCs for photonic-band-gap-based applications.
Probing Planar Defects in Nanoparticle Superlattices by 3d Small-Angle Electron Diffraction Tomography and Real Space Imaging

Arnaud Mayence,Dong Wang,German Salazar-Alvarez,Peter Oleynikov,Lennart Bergstrom

DOI: https://doi.org/10.1039/c4nr04156a

IF: 6.7

2014-01-01

Nanoscale

Abstract:We demonstrate how the acquisition and processing of 3D electron diffraction data can be extended to characterize structural features on the mesoscale, and show how lattice distortions in superlattices of self-assembled spherical Pd nanoparticles can be quantified by three-dimensional small-angle electron diffraction tomography (3D SA-EDT). Transmission electron microscopy real space imaging and 3D SA-EDT reveal a high density of stacking faults that was related to a competition between fcc and hcp arrangements during assembly. Information on the orientation of the stacking faults was used to make analogies between planar defects in the superlattices and Shockley partial dislocations in metallic systems.
Imaging Simulation of Charged Nanowires in TEM with Large Defocus Distance.

Te Shi,Shikai Liu,H. Tian,Z. J. Ding

DOI: https://doi.org/10.1093/jmicro/dfab008

2021-01-01

Microscopy

Abstract:In transmission electron microscope (TEM), both the amplitude and the phase of electron beam change when electrons traverse a specimen. The amplitude is easily obtained by the square root of the intensity of a TEM image, while the phase affects defocused images. In order to obtain the phase map and verify the theoretical model of the interaction between electron beam and specimen, a lot of simulations have to be performed by researchers. In this work, we have simulated defocus images of a SiC nanowire in TEM with the method of electron optics. Mean inner potential and charge distribution on the nanowire have been considered in the simulation. Besides, due to electron scattering, coherence loss of the electron beam has been introduced. A dynamic process with Bayesian optimization was used in the simulation. With the infocus image as input and by adjusting fitting parameters, the defocus image is determined with a reasonable charge distribution. The calculated defocus images are in a good agreement with the experimental ones. Here, we present a complete solution and verification method for solving nanoscale charge distribution in TEM.
Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

JJ Niu,H Sha,YW Wang,XY Ma,DR Yang

DOI: https://doi.org/10.1016/s0167-9317(03)00026-1

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900°C) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs.
High-resolution Detection of Au Catalyst Atoms in Si Nanowires

Jonathan E. Allen,Eric R. Hemesath,Daniel E. Perea,Jessica L. Lensch-Falk,Z.Y. Li,Feng Yin,Mhairi H. Gass,Peng Wang,Andrew L. Bleloch,Richard E. Palmer,Lincoln J. Lauhon

DOI: https://doi.org/10.1038/nnano.2008.5

IF: 64.8

2008-01-01

Nature

Abstract:The potential for the metal nanocatalyst to contaminate vapour–liquid–solid grown semiconductor nanowires has been a long-standing concern, because the most common catalyst material, Au, is highly detrimental to the performance of minority carrier electronic devices. We have detected single Au atoms in Si nanowires grown using Au nanocatalyst particles in a vapour–liquid–solid process. Using high-angle annular dark-field scanning transmission electron microscopy, Au atoms were observed in higher numbers than expected from a simple extrapolation of the bulk solubility to the low growth temperature. Direct measurements of the minority carrier diffusion length versus nanowire diameter, however, demonstrate that surface recombination controls minority carrier transport in as-grown n-type nanowires; the influence of Au is negligible. These results advance the quantitative correlation of atomic-scale structure with the properties of nanomaterials and can provide essential guidance to the development of nanowire-based device technologies.
3D Complete-Tilt Electron Tomography of Semiconductor Nanowires

Jinsong Wu,Sujing Xie,Eric R. Hemesath,Lincoln J. Lauhon,Vinayak P. Dravid

DOI: https://doi.org/10.1017/s1431927610057302

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Transmission Electron Microscopy Study of Si Nanowires

GW Zhou,Z Zhang,ZG Bai,SQ Feng,DP Yu

DOI: https://doi.org/10.1063/1.121945

IF: 4

1998-01-01

Applied Physics Letters

Abstract:Microstructures of Si nanowires (SiNW’s) synthesized using laser ablation were investigated by transmission electron microscopy. The SiNW’s have a high density of structural defects, which may play an important role in the formation of SiNW’s and in the determination of the morphology of the nanowires. A model for the growth mechanism of the SiNW’s was discussed on the basis of the observation.
Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

AB Shah,JM Zuo,QM Ramasse,JG Wen,X Zhai,A. Bhattacharya,JN Eckstein

DOI: https://doi.org/10.1017/s143192761005631x

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Electron Tomography of Au-Catalyzed Semiconductor Nanowires

Jinsong Wu,Sonal Padalkar,Sujing Xie,Eric R. Hemesath,Jipeng Cheng,George Liu,Aiming Yan,Justin G. Connell,Eiko Nakazawa,Xiaofeng Zhang,Lincoln J. Lauhon,Vinayak P. Dravid

DOI: https://doi.org/10.1021/jp310816f

2013-01-01

Abstract:Electron tomography based on Z-contrast scanning transmission electron microscopy (STEM) can be applied to study 3D morphology of nanomaterials at high resolution, that is, 1 nm in all three spatial dimensions, to provide comprehensive insights into the structure of nanomaterials and their interfaces. Here, we report the 3D characterization of Au-catalyzed Ge and Si nanowires using a full-space tilting holder to address the "missing wedge" problem in STEM electron tomography. Electron tomography specimens were prepared by a novel two-step sample preparation process to minimize surface damage induced by focused ion beam (FIB) milling. The quality of specimen preparation protocol is demonstrated by the clear visibility of {112} facets in the reconstructed volume, and 3D morphology of Au nanoparticles on the nanowire surface. The 3D distribution of the Au nanoparticles on the coated Ge nanowires is also established. The integrated combination of innovative specimen preparation and full-tilt tomography represents a useful advance in the 3D analysis of nanostructures.
Study of point defect detectors in Si

Dingyu Shen,Jian Chen,Qiang Zhao,Xuemei Wang

1999-01-01

Nuclear Science and Techniques/Hewuli

Abstract:The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B+ implantation. The concentration of interstitial resulting from the B+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well.

Direct Imaging of Point Defect Configurations for Au Inside Si Nanowires

Point defect configurations of supersaturated Au atoms inside Si nanowires.

In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

In Situ Atomistic Observation of the Deformation Mechanism of Au Nanowires with Twin–twin Intersection

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Direct Imaging of Core-shell Structure in Ag-Au Nanoparticles

Identification of active atomic defects in a monolayered tungsten disulphide nanoribbon

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Imaging of Optically Active Defects with Nanometer Resolution

Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC

Precise Fabrication of Point Defects in Self-Assembled Three-Dimensional Macroporous Photonic Crystals.

Probing Planar Defects in Nanoparticle Superlattices by 3d Small-Angle Electron Diffraction Tomography and Real Space Imaging

Imaging Simulation of Charged Nanowires in TEM with Large Defocus Distance.

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

High-resolution Detection of Au Catalyst Atoms in Si Nanowires

3D Complete-Tilt Electron Tomography of Semiconductor Nanowires

Transmission Electron Microscopy Study of Si Nanowires

Direct Mapping of Confined Interfacial States in Oxides Using Aberration Corrected STEM and EELS

Electron Tomography of Au-Catalyzed Semiconductor Nanowires

Study of point defect detectors in Si