Abstract:Ultrathin indium oxide (InOx) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C2H5)2InCH3 and O2 plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( ${T}_{\text{ch}}$ ), channel length ( ${L}_{\text{ch}}$ ), and post-annealing conditions on the performance of TFTs with HfO2 gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm ${T}_{\text{ch}}$ , $2 ~\mu \text{m} {L}_{\text{ch}}$ , and 8.5 nm HfO2 gate dielectric after annealing at 325 °C for 180 s in O2. Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO2 and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO2 passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~1010, and relatively high field effect mobility of 17 cm2/ $\text{V}\cdot \text{s}$ . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO2 passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications.

Effect of Insulating Layer Material and Structure on Performance of Thin Film Transistors

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Interfacial Structures and Properties of SiN Layer in a-Si Thin Film Transistors

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Numerical Simulation and Analysis of the Switching Performance for Printable Low-Voltage Organic Thin-Film Transistors in Active-Matrix Backplanes

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors