Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Investigation of Short-Circuit Failure Mechanisms of SiC MOSFETs by Varying DC Bus Voltage

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Analysis of Short-Circuit Behavior for SiC MOSFETs with Various Circuit Characteristics

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism