Abstract:This article proposes a novel ultralow specific ON-resistance (${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

Edge Termination Design of a 700-V Triple RESURF LDMOS with N-Type Top Layer

3-D Edge Termination Design and ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ -BV Model of A 700-V Triple RESURF LDMOS with N-Type Top Layer

On the Progressive Performance of a 700-V Triple RESURF LDMOS Based on Substrate Termination Technology

A Novel RESURF LDMOS with Embedded CB-layer

A Novel Ultralow RON,sp Triple RESURF LDMOS with Sandwich N-P-n Layer

A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer

Design of a Novel Triple Reduced Surface Field LDMOS with Partial Linear Variable Doping N-Type Top Layer

Design of 700 V Triple RESURF Nldmos with Low On-Resistance

Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology

Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection

Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

Modeling of a Triple Reduced Surface Field Silicon-on-insulator Lateral Double-Diffused Metal–oxide–semiconductor Field-Effect Transistor with Low On-State Resistance

A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer

A novel triple RESURF LDMOS with partial N+ buried layer

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS

An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

Novel High-Tolerance Termination with Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET

A Novel 700V Deep Trench Isolated Double RESURF LDMOS with P-sink Layer