Abstract:This article proposes a novel ultralow specific ON-resistance (${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

3-D Edge Termination Design and ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ -BV Model of A 700-V Triple RESURF LDMOS with N-Type Top Layer

Edge Termination Design of a 700-V Triple RESURF LDMOS with N-Type Top Layer

On the Progressive Performance of a 700-V Triple RESURF LDMOS Based on Substrate Termination Technology

A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer

A Novel Ultralow RON,sp Triple RESURF LDMOS with Sandwich N-P-n Layer

Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology

Design of 700 V Triple RESURF Nldmos with Low On-Resistance

Novel Reduced ON-Resistance LDMOS with an Enhanced Breakdown Voltage

Analytical Model and New Structure of the Variable- $k$ Dielectric Trench LDMOS with Improved Breakdown Voltage and Specific ON-Resistance

Design of a Novel Triple Reduced Surface Field LDMOS with Partial Linear Variable Doping N-Type Top Layer

Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection

A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer

An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

A novel triple RESURF LDMOS with partial N+ buried layer

Modeling of a Triple Reduced Surface Field Silicon-on-insulator Lateral Double-Diffused Metal–oxide–semiconductor Field-Effect Transistor with Low On-State Resistance

Ultralow ON-Resistance High-Voltage P-Channel LDMOS with an Accumulation-Effect Extended Gate

Ultralow specific on-resistance high voltage LDMOS with a varible-K dielectric trench

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer