Abstract:In this paper, uniformly doped drift region of silicon carbide (SiC) super-junction (SJ) MOSFET is replaced with vertical variable doping profile (VVD) to achieve a better tradeoff between breakdown voltage (BV) and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula>). While it is known that the SJ device consists of two vertical columns of n- and p-type, SJ VVD feature lies in increasing the doping concentration from top to bottom in the N-column and vice-versa in the P-column within the drift region. The proposed SJ VVD allows <inline-formula> <tex-math notation="LaTeX">$\text {R}_{{\text {sp, on}}}$ </tex-math></inline-formula> to reduce further due to increased average doping concentration in conducting N-column and BV to increase further due to shifting of an electric field from corners to the center of the drift region. BV and <inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula> improved by 10% in an SJ VVD MOSFET and these parameters follow linear relationship similar to SJ MOSFET. The 2-D numerical simulations from Synopsys TCAD are used for investigating the static and dynamic characteristics of the device. In addition to 30% improvement in Baliga figure of merit, 35% improvement is obtained over SJ MOSFET in turn on and turn off switching energies for a clamped inductive circuit at 1200 V–20 A. Improved dynamic characteristics of SJ VVD can be attributed to reduction in gate charge (<inline-formula> <tex-math notation="LaTeX">${Q}_{g}$ </tex-math></inline-formula>) and miller capacitance (<inline-formula> <tex-math notation="LaTeX">${c}_{\text {rss}}$ </tex-math></inline-formula>) compared to SJ MOSFET.

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