An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

Ming Qiao,Wenliang Liu,Liu Yuan,Penglong Xu,Chunxia Ma,Feng Lin,Kejun Liu,Yin Guo,Zhiyu Lin,Sen Zhang,Bo Zhang

DOI: https://doi.org/10.1109/ispsd49238.2022.9813626

2022-01-01

Abstract:This paper proposes a 200V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) for voltage extension of a 0.18µm Bipolar-CMOS-DMOS (BCD) process. Compared with the conventional single RESURF LDMOS, this novel structure features an n-p-n layer in the drift region, which can decrease the specific on-resistance (R on,sp ) without sacrificing the breakdown voltage (V B ) of power devices. By optimizing the charge balance among n-type drift region, n-p-n layer and P-epi, the fabricated device successfully obtains an experimental V B of 258 V when the drift region length (L D ) is 14 µm and the corresponding R on,sp is 509 mΩ•mm 2 , which is more competitive than other reported devices with the same operating voltage level. Furthermore, the measured I DS -V DS characteristic of this device also exhibit a good safe operating area (SOA).