Abstract:Boron transient enhanced diffusion (TED) causes reverse short channel effect, and threshold voltage (Vt) increases abnormally, which seriously affects the device performance and yield. The Vt increment is different with different channel size. To investigate channel impurity distribution and the influence of channel size on TED, Vt adjustment ion-implantation, LDD ion-implantation and carbon co-implantation experiments were performed on 40 nm CMOS process, measuring Vt with different channel size and process, and using TCAD tools for process simulation. Experiments results show that Vt rises first with channel length decreasing and then drops sharply after reaching the maximum at 0.55 μm. The Vt -L curve slope decreases when channel width decreases. Vt decreases with channel width and it is decreasing faster and faster when channel length is constant. The interstitial Si atoms are injected by LDD ion-implantation and diffuse into channel, while boron pile up at the LDD-channel boundary. However, boron leak into the shallow trench isolation (STI) area at the corner formed by LDD and channel. Both pile-up and leakage control boron concentration distribution in channel. The Vt shift induced by boron TED is channel size-dependent, and high energy carbon co-implantation and infrared rapid thermal anneal can suppress TED effect effectively.

V<inf>T</inf> implant energy impacting DIBL and punch-through effects of nano-node n-channel FinFETs on SOI wafers

Punch-through and DIBL Effects Exposing Nano-node SOI FinFETs under Heat Stress

DIBL Effect Gauging the Integrity of Nano-node N-Channel FinFETs

Electrical Characteristics of n-Type FinFETs Under <inline-formula> <tex-math notation="LaTeX">$V_{T}$ </tex-math></inline-formula> Ion Implantation on SOI Substrate

Drive current behaviors of multi N-channel FinFETs under different V<inf>T</inf> implant energies

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

GIDL effect observed in FinFET shapes and V<inf>t</inf> implant energy

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Electrical characteristics of multi-gate P-channel FinFETs with VT implanting energies under temperature stress

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

The DIBL Effect of SOI P-Channel FinFETs under Various SDE Lengths

Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies

Channel Size-Dependent TED Effect in MOSFETs with Infrared Rapid Thermal Anneal

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Punch-through and Junction Breakdown Characteristics for Uniaxial Strained Nano-Node Metal-Oxide-semiconductor Field-Effect Transistors on (100) Wafers

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

The Impact of PTS Doping and Fin Angle on TID Response of 14-Nm Bulk FinFETs

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models