Abstract:Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation results show that the device off-leakage, including subthreshold leakage through the channel (Isub) and punch-through leakage (IPT) in the sub-channel, is strongly related to the S/D recess process. Firstly, device electrical characteristics such as current density distributions, On/Off-state current (Ion, Ioff), subthreshold swing (SS), RC delay, and gate capacitance (Cgg) are investigated quantitatively for DC/AC performance evaluation and comparison according to S/D lateral recess depth (Lrcs) variations. For both device types, larger Lrcs will result in a shorter effective channel length (Leff), so that the Ion and Ioff simultaneously increase. At the constant Ioff, the Lrcs can be optimized to enhance the device’s drivability by ~3% and improve the device’s RC delay by ~1.5% due to a larger Cgg as a penalty. Secondly, S/D over recess depth (Hrcs) in the vertical direction severely affects the punch-through leakage in the Sub-Fin or bottom parasitic channel region. The NSFET exhibits less Ioff sensitivity provided that it can be well controlled under 12 nm since the bottom parasitic channel is still gated. Furthermore, with both Hrcs and Lrcs accounted for in the device fabrication, the NSFET still shows better control of the off-leakage in the intrinsic and bottom parasitic channel regions and ~37% leakage reduction compared with FinFETs, which would be critical to enable further scaling and the low standby power application. Finally, the S/D recess engineering strategy has been given: a certain lateral recess could be optimized to obtain the best drive current and RC delay, while the vertical over-recess should be in tight management to keep the static power dissipation as low as possible.

DIBL Effect Gauging the Integrity of Nano-node N-Channel FinFETs

The DIBL Effect of SOI P-Channel FinFETs under Various SDE Lengths

Punch-through and DIBL Effects Exposing Nano-node SOI FinFETs under Heat Stress

V<inf>T</inf> implant energy impacting DIBL and punch-through effects of nano-node n-channel FinFETs on SOI wafers

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Integrity of n-type channel surface for nano-node high-k gate dielectric

Nano-Node N-Type Gate Dielectric Integrity And Uniformity Correlated To Nitridation Process

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

GIDL effect observed in FinFET shapes and V<inf>t</inf> implant energy

The side effects on N-Type FinFET Devices

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Mechanism Study of Hot Carrier Degradation Recovery by Gate Induced Drain Leakage in 14nm N FinFET

Performance Characteristics of P -Channel FinFETs with Varied Si-fin Extension Lengths for Source and Drain Contacts

Punch-through and Junction Breakdown Characteristics for Uniaxial Strained Nano-Node Metal-Oxide-semiconductor Field-Effect Transistors on (100) Wafers

The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures