Abstract:Uniformity consideration in integrated-circuit manufacturing is an impressive task, especially in the field of nano-node semiconductors. The use of high-dielectric-constant (high-K) materials to promote drive current in deep nano-node devices is also increasing. One solution involves enhancing the quality of the high-K dielectric layer as a gate dielectric with nitridation treatment. This study combines the aforementioned concerns in deep nano-node manufacturing and demonstrates their relationship. Given the electrical measurement of the wafers treated with decoupled plasma nitridation (DPN), a few desired key parameters, including drive current (IDS), threshold voltage (Vth), gate oxide capacitance per area (Cox), subthreshold swing (SS), and interface state density, in the design of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) are observed. A uniformity comparison with different DPN processes is also performed, and the uniformity of the gate dielectric in input/output and core zones is discussed. Based on the uniformity distribution, lower SS values are obtained by adopting the low-temperature nitridation treatment after high-K dielectric deposition. The increased nitrogen concentration decreases the deviation, thereby indicating improved uniformity of SS values.

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Electrical Stress Probing Recovery Efficiency of 28nm HK/MG Nmosfets under Different Nitrogen Concentration in Nitridation

Dpn Treatment Plus Annealing Temperatures for 28nm Hk/Mg Nmosfets with Chc Stress

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Junction Integrity for 28nm High-k Nmosfets with Thermal Stress

Reliability Improvement of 28-nm High- /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Electrical Quality Of 28nm Hk/Mg Mosfets With Pda And Dpn Treatment

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Observation Of Degradation And Recovery Of Stacked Hfox/Zroy/Hfox Mosfets

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Integrity of n-type channel surface for nano-node high-k gate dielectric