Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Dpn Treatment Plus Annealing Temperatures for 28nm Hk/Mg Nmosfets with Chc Stress

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Electrical Quality Of 28nm Hk/Mg Mosfets With Pda And Dpn Treatment

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Electrical Stress Probing Recovery Efficiency of 28nm HK/MG Nmosfets under Different Nitrogen Concentration in Nitridation

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

Study on NBTI improvement of HfO<inf>2</inf>-based 14 nm P-type FinFET with post high-k deposition thermal treatment

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack