Abstract:Uniformity consideration in integrated-circuit manufacturing is an impressive task, especially in the field of nano-node semiconductors. The use of high-dielectric-constant (high-K) materials to promote drive current in deep nano-node devices is also increasing. One solution involves enhancing the quality of the high-K dielectric layer as a gate dielectric with nitridation treatment. This study combines the aforementioned concerns in deep nano-node manufacturing and demonstrates their relationship. Given the electrical measurement of the wafers treated with decoupled plasma nitridation (DPN), a few desired key parameters, including drive current (IDS), threshold voltage (Vth), gate oxide capacitance per area (Cox), subthreshold swing (SS), and interface state density, in the design of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) are observed. A uniformity comparison with different DPN processes is also performed, and the uniformity of the gate dielectric in input/output and core zones is discussed. Based on the uniformity distribution, lower SS values are obtained by adopting the low-temperature nitridation treatment after high-K dielectric deposition. The increased nitrogen concentration decreases the deviation, thereby indicating improved uniformity of SS values.

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Dpn Treatment Plus Annealing Temperatures for 28nm Hk/Mg Nmosfets with Chc Stress

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Q-Factor Performance of 28 Nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Integrity of n-type channel surface for nano-node high-k gate dielectric

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Reliability Improvement of 28-nm High- /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing