Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Threshold Voltage Instability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium Based Dielectrics

Dpn Treatment Plus Annealing Temperatures for 28nm Hk/Mg Nmosfets with Chc Stress

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Modification of Early Effect for 28-Nm Nmosfets Deposited with HfZrOx Dielectric after DPN Process Accompanying Nitrogen Concentrations