Abstract:Uniformity consideration in integrated-circuit manufacturing is an impressive task, especially in the field of nano-node semiconductors. The use of high-dielectric-constant (high-K) materials to promote drive current in deep nano-node devices is also increasing. One solution involves enhancing the quality of the high-K dielectric layer as a gate dielectric with nitridation treatment. This study combines the aforementioned concerns in deep nano-node manufacturing and demonstrates their relationship. Given the electrical measurement of the wafers treated with decoupled plasma nitridation (DPN), a few desired key parameters, including drive current (IDS), threshold voltage (Vth), gate oxide capacitance per area (Cox), subthreshold swing (SS), and interface state density, in the design of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) are observed. A uniformity comparison with different DPN processes is also performed, and the uniformity of the gate dielectric in input/output and core zones is discussed. Based on the uniformity distribution, lower SS values are obtained by adopting the low-temperature nitridation treatment after high-K dielectric deposition. The increased nitrogen concentration decreases the deviation, thereby indicating improved uniformity of SS values.

Modification of Early Effect for 28-Nm Nmosfets Deposited with HfZrOx Dielectric after DPN Process Accompanying Nitrogen Concentrations

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Gain Efficiency of 28 Nm-Node Various Channelwidth Pmosfets under Nitrogen Concentration of DPN Treatment

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Decoupled Plasma Nitridation (DPN) and Postnitridation Annealing (PNA) Treatment for Metal Boundary Effect Reduction

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs