Abstract:The motivation of this study was to solve the high problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses. As a result, increases and decreases as the dose increases. When it exceeds 1.0E15 cm , the occurrence of tail-type and that deviate from the normal distribution increases. Implanted nitrogen enhances the diffusion of dopants in the LDD bulk but suppresses it on the silicon surface. As a result, the depletion curvature at the LDD edge becomes a negative shape and increases the electric field. We performed the same experiment on logic MOSFETs to comprehensively analyze other electrical effects. Nitrogen improves the HCI immunity of MOSFETs but degrades for 2.5 Volt and 8 Volt MOSFETs when the dose is above 1.0E15 cm . The short-channel effect of 2.5 Volt MOSFET is insensitive to nitrogen but is suppressed in CORE MOSFET when the dose is over 1.3E15 cm . Nitrogen changes through interactions with co-implanted species and nitrogen dose. As a result, nitrogen co-implanted with phosphorus shows a parabolic-like trend. However, in the case of CORE MOSFET implanted with arsenic, does not show a parabolic-like trend but increases continuously. This experiment did not find much benefit from nitrogen implantation for 2.5 Volt and 8 Volt MOSFETs. For all MOSFETs, it is recommended that the nitrogen dosage not exceed 1.0E15 cm .

Gain Efficiency of 28 Nm-Node Various Channelwidth Pmosfets under Nitrogen Concentration of DPN Treatment

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Electrical Quality Of 28nm Hk/Mg Mosfets With Pda And Dpn Treatment

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Modification of Early Effect for 28-Nm Nmosfets Deposited with HfZrOx Dielectric after DPN Process Accompanying Nitrogen Concentrations

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Electrical Stress Probing Recovery Efficiency of 28nm HK/MG Nmosfets under Different Nitrogen Concentration in Nitridation

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs