Abstract:Uniformity consideration in integrated-circuit manufacturing is an impressive task, especially in the field of nano-node semiconductors. The use of high-dielectric-constant (high-K) materials to promote drive current in deep nano-node devices is also increasing. One solution involves enhancing the quality of the high-K dielectric layer as a gate dielectric with nitridation treatment. This study combines the aforementioned concerns in deep nano-node manufacturing and demonstrates their relationship. Given the electrical measurement of the wafers treated with decoupled plasma nitridation (DPN), a few desired key parameters, including drive current (IDS), threshold voltage (Vth), gate oxide capacitance per area (Cox), subthreshold swing (SS), and interface state density, in the design of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) are observed. A uniformity comparison with different DPN processes is also performed, and the uniformity of the gate dielectric in input/output and core zones is discussed. Based on the uniformity distribution, lower SS values are obtained by adopting the low-temperature nitridation treatment after high-K dielectric deposition. The increased nitrogen concentration decreases the deviation, thereby indicating improved uniformity of SS values.

Electrical Stress Probing Recovery Efficiency of 28nm HK/MG Nmosfets under Different Nitrogen Concentration in Nitridation

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

Electrical Quality Of 28nm Hk/Mg Mosfets With Pda And Dpn Treatment

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Dpn Treatment Plus Annealing Temperatures for 28nm Hk/Mg Nmosfets with Chc Stress

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Junction Integrity for 28nm High-k Nmosfets with Thermal Stress

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

The Integrity of 28nm Hk/Mg Nmosfets Probed with Drain Bias Stress

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Gain Efficiency of 28 Nm-Node Various Channelwidth Pmosfets under Nitrogen Concentration of DPN Treatment

Nano-Node N-Type Gate Dielectric Integrity And Uniformity Correlated To Nitridation Process

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Q-Factor Performance of 28 Nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures