Abstract:With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection (HCI) stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator (SOI) MOSFETs under the HCI stress are investigated on devices of different gate lengths (L=30-150 nm). Our experimental data demonstrate that the time evolutions of the threshold voltage change (Vth) under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier (CHC) effect and the bias temperature instability (BTI) effect. The distribution and magnitude of the electric field along the MOSFET's channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Vth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Vth=A•tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experiments of the HCI stress on MOSFTTs show larger recovery in device of shorter gate length. It is found that the ratio of the recovery to the total degradation in the 30 nm gate-length device is almost twice as large as that in the 150 nm device. The degradation from the CHC effect has no recovery, and the larger recovery in the shorter-channel device implies the larger component of the BTI degradation. Another intriguing fact is that our experimental result on SOI MOSFET is inconsistent with the recently reported result on FinFET. We argue that the reported stronger HCI degradation in FinFET may not be ascribed only to the stronger electric field in the shorter channel, but also to the fact that the FinFET' channel is three-dimensionally surrounded by the gate dielectric. This kind of three-dimensional structure significantly increases the chance for electrons or holes to be injected into the dielectric layer. Therefore the HCI reliability of planar SOI MOSFETs may be better than that of FinFETs at the same level of gate length. In conclusion, the BTI effect is an important source of the degradation during the HCI stress in ultra-short-channel device, and it is no more negligible in analyzing the underlying physical mechanism.

Junction Integrity for 28nm High-k Nmosfets with Thermal Stress

The Integrity of 28nm Hk/Mg Nmosfets Probed with Drain Bias Stress

Integrity of n-type channel surface for nano-node high-k gate dielectric

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Deterioration of junction performance with temperature effect for 45 nm Si-capping MOSFETs on <110> silicon substrate

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Electrical Stress Probing Recovery Efficiency of 28nm HK/MG Nmosfets under Different Nitrogen Concentration in Nitridation

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Embedded SiGe Source/drain and Temperature Degrading Junction Performance on <110> 45 Nm MOSFETs

Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained Nmosfets

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs