Abstract:Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

Lithography-free Electrical Transport Measurements on 2D Materials by Direct Microprobing

Sub-micrometer four-point probe transport measurements on graphene

Probing Electrical Transport in Nanomaterials: Conductivity of Individual Carbon Nanotubes

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Measuring Electronic Transport in a Single Carbon Nanotube Inside the SEM

Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

Fabrication and Electric Field Dependent Transport Measurements of Mesoscopic Graphite Devices

Contactless Characterization of Electronic Properties of Nanomaterials Using Dielectric Force Microscopy

Via Method for Lithography Free Contact and Preservation of 2D Materials

Electrochemical Lithiation of Two Dimensional Materials by Nano Battery---an in Situ Study

Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Simultaneous measurement of anisotropic thermal conductivity and thermal boundary conductance of 2-dimensional materials

In-situ electrical conductance measurement of suspended ultra-narrow graphene nanoribbons observed via transmission electron microscopy

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Full-scale Simulation of Electron Transport in Nanoporous Graphene: Probing the Talbot Effect

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

The low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer scale objects: application to carbon nanotubes

Noninvasive Deterministic Nanostructures Lithography on 2D Transition Metal Dichalcogenides