Abstract:Graphene, a monolayer of carbon atoms tightly packed into a two-dimensional (2D) hexagonal lattice, has recently been successfully isolated from highly ordered pyrolytic graphite (HOPG) and shown to be thermodynamically stable and to exhibit astonishing transport properties, such as an electron mobility of 25;000 cm2=Vs and velocity of 10 cm=s at room temperature [1–3]. With the high carrier mobility enabled by its unique electronic structure, graphene has attracted many research efforts recently. Initial works have demonstrated the great potential of graphene for modern electronics applications. These efforts are focused on overcoming the challenges faced to incorporate graphene into microelectronic applications. The three particular challenges are developing a synthesis technique to manufacture graphene over wafer-scale areas, opening an energy bandgap in graphene, and forming a high-quality gate dielectric on the surface of graphene. An interesting differentiation between the many well-established semiconductor materials in microelectronic industry and graphene is how it was discovered. Most semiconductor materials are created through deposition or melt processes, but the origin of graphene is unique. The first successfully isolated sheet of graphene was formed by Geim and Novoselov through a mechanical exfoliation technique which used cellophane tape to remove and subsequently transfer graphene sheets from HOPG to SiO2 [2]. This produced graphitic flakes tens of microns in size upon which electronic devices were fabricated. The pioneering work on isolating graphene has been recognized by earning its discoverers the Nobel Prize in Physics for 2010. Since the mechanical exfoliation technique does not require expensive equipment, this approach is still widely used for research purposes. Various alternative methods have been studied and developed to fabricate uniform graphene

Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance

The role of contacts in graphene transistors: A scanning photocurrent study

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping

Low-temperature quantum transport in CVD-grown single crystal graphene

Scanning Tunneling Microscope Studies of Ultrathin Graphitic (graphene) Films on an Insulating Substrate under Ambient Conditions

Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography

Observation of quantum transport features in graphene devices fabricated utilizing a nano-manipulating probe technique

Low-field magnetotransport in graphene cavity devices.

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

Probing the graphene/substrate interaction by electron tunneling decay

Substrate level control of the local doping in graphene

Chapter 6 Magneto-Transport on Epitaxial Graphene

Electronic doping and scattering by transition metals on graphene

Tuning the Electrical Properties of Large Area Graphene Through Boron-Nitrogen Co-Doping

Residual quantum coherent electron transport in doped graphene leads

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

The role of temperature on defect diffusion and nanoscale patterning in graphene

Room-temperature electric field effect and carrier-type inversion in graphene films

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping