Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric
Hongshan Xiao,Yifan Liu,Sujuan Ding,Yunfei Gao,Minglong Zhai,Xuelei Liang,Chuanhong Jin,Honggang Liu,Zhiyong Zhang
DOI: https://doi.org/10.1021/acsaelm.3c00613
IF: 4.494
2023-07-10
ACS Applied Electronic Materials
Abstract:Measurement and optimization of interface states in metal oxide semiconductors are the premise of building high-performance and high-reliability field-effect transistors (FETs). Although FETs built on semiconducting carbon nanotube (CNT) films have been demonstrated as promising devices for many applications, including integrated circuits (ICs), thin-film electronics, and biosensors, systemic research on the interface state of CNT film FETs, including accurate measurement and optimization schemes, is lacking. In this work, we fabricate MOS capacitors with an area of 400 μm2 on a CNT network film with a Y2O3 gate dielectric and carry out admittance measurements to investigate electrically active traps near the Y2O3/CNT interface. Through the conductance method and high-low frequency method, we extract the energy-dependent interface trap density (D it) and border trap density (N bt) of CNT MOS FETs based on the measured admittance dataset. Postdeposition annealing (PDA) processes with different gases at 300 °C show the ability to lower the D it and N bt of the Y2O3/CNT interface and then improve the performance of CNT film FETs.
materials science, multidisciplinary,engineering, electrical & electronic