Abstract:This article reports a high-gain wideband low-noise amplifier (LNA) with single ended input and differential output for multi-standard wireless receiver operating in 0.2 to 7 GHz. The proposed balun-LNA is cascode structure with common-gate–common-source (CG–CS) balun load to achieve single to differential conversion. Focusing on improving the voltage gain, bandwidth and noise performance at the same time, several techniques are implemented in this balun-LNA. A current source is added shunting CG stage to relieve voltage headroom and improve gain and linearity. Wideband input matching is achieved by active shunt-shunt resistive feedback, together with the input series inductor. Moreover, feedforward and current-reuse technique are introduced to further optimize the noise performance. The proposed LNA has a measured voltage gain of 26 dB which is nearly 6 dB higher than other balun-LNA with same supply and process. Moreover, the minimum noise figure (NF) is 2.0 dB owing to multiple noise-optimized technique. The achieved input power at 1 dB gain compression point (IP1 dB) is −14 dB m at 1 GHz and input return loss ( S11 ) is better than −10 dB across entire operating frequency range. IIP3 and IIP2 achieve −7 dBm and 25 dBm respectively, measured at 1 GHz. The power consumption is 15.5 mW at 1.2 V supply. The LNA is fabricated in 130 nm CMOS process and the active area is 0.097 mm2 . The LNA achieves high voltage gain and wide operating frequency range with low NF, which can be reflected from the figure of merit (FOM) of 23.1.

A 150Ghz High Gain Amplifier Based on over Neutralization Technique and Marchand Balun Matching Networks in 65nm CMOS

A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching

A compact, fully differential D-band CMOS amplifier in 65nm CMOS

A 143ghz Power Amplifier Based On Over Neutralization And Power Combining Technique In 65nm Cmos

A Gm-boosted and current peaking wideband merged LNA and mixer

Design and Analysis of a 26–34.5-Ghz Power Amplifier with Balanced Mismatch Reduction and Interstage Matching

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

A 6.5-12 GHz Balanced Variable Gain Low-Noise Amplifier with Frequency-Selective Non-Foster Gain Equalization Technique

A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing

A 150GHz amplifier based on coupled transmission line neutralization and inter stage impedance matching with 20dB gain in 65nm CMOS

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A High Performance 2-Ghz Direct-Conversion Front End with Single-Ended RF Input in 0.13 Um CMOS

A 150ghz Amplifier Based On Coupled Transmission Line Neutralization With 22db Gain In 65nm Cmos

Design and Optimization of a Milli-Meter Wave Amplifier Using Nano-Scale CMOS Devices

Design of 60-Ghz Amplifiers Based on over Neutralization and Optimized Inter-Stage Matching Networks in 65-Nm CMOS

A 3-to-78GHz Differential Distributed Amplifier with Ultra- Balanced Active Balun and Gain Boosting Techniques in 65-nm CMOS Process

D-band Neutralized Amplifier Design Based on Accurate Millimeter-Wave De-Embedding Method

142 GHz Amplifier with 18.5 Db Gain and 7.9 Mw DC Power in 65 Nm CMOS

A 21-to-41-GHz High-Gain Low Noise Amplifier With Triple-Coupled Technique for Multiband Wireless Applications

A 68–79 GHZ 15.6DBM Power Amplifier in 65NM CMOS

A high-gain wideband balun-LNA with multiple noise-optimized technique