Abstract:Top-gated (TG) molybdenum disulfide (MoS 2 ) field-effect transistors (FETs) suffer from surface damage, unintentional doping, and other defects introduced to the MoS 2 channel during the direct deposition of the gate dielectric. In addition, the delicate MoS 2 cannot withstand high-temperature processing or annealing. To overcome these obstacles, a novel path to prepare TG MoS 2 negative-capacitance (NC) FETs is proposed in this study. A ferroelectric HfZrO 2 (HZO) is first deposited on the mica flake by pulsed laser deposition (PLD) and then annealed by rapid thermal processing. Subsequently, the HZO/mica stack is integrally transferred onto the MoS 2 surface, without needing to expose the MoS 2 flake to harsh temperatures or PLD environments. TG multilayered MoS 2 NCFETs with the HZO/mica stack are fabricated and demonstrate stable NC effects and superior performance with a subthreshold swing (SS) of 49 mV/dec, ON/OFF current ratio above 10 7 , and anticlockwise hysteresis voltages of 64 mV, which are attributed to vital contributions from the damage-free mica/MoS 2 van der Waals heterojunction interface and reasonable capacitance matching between the mica dielectric and the ferroelectric HZO film. Moreover, the experimental results of the dual-gate MoS 2 transistor modulated by the bottom gate show that a positive bottom-gate bias can increase drain current and decrease hysteresis voltage, and a negative bottom-gate bias can reduce SS. Therefore, the proposed approach changes the current situation that the PLD method is hardly used to fabricate TG MoS 2 transistors and opens a new window for nanoelectronics.

Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer As Gate Dielectric.

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

MoS<sub>2</sub> negative-capacitance transistors with steep slope and negligible hysteresis by using monolayer Al<i><sub>1-x</sub></i>Zr<i><sub>x</sub></i>O<i><sub>y</sub></i> as gate dielectric plus NH<sub>3</sub>-plasma treatment

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

An All Two-Dimensional Vertical Heterostructure Graphene/cuinp2s6/mos2 for Negative Capacitance Field Effect Transistor

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Top-Gated MoS2 Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO2 on Mica

Negative-Capacitance FET With a Cold Source

Impacts of HfZrO Thickness and Anneal Temperature on Performance of MoS2 Negative-Capacitance Field-Effect Transistors

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Improved Tradeoff Between Subthreshold Swing and Hysteresis for MoS<sub>2</sub> Negative-Capacitance FETs by Optimizing Gate-Stack of Hf<sub>1-<i>x</i></sub>Zr<i><sub>x</sub></i>O<sub>2</sub>/Al<sub>2</sub> O<sub>3</sub>