Steep-slope hysteresis-free negative capacitance MoS2 transistors
Mengwei Si,Chun-Jung Su,Chunsheng Jiang,Nathan J. Conrad,Hong Zhou,Kerry D. Maize,Gang Qiu,Chien-Ting Wu,Ali Shakouri,Muhammad A. Alam,Peide D. Ye
DOI: https://doi.org/10.1038/s41565-017-0010-1
IF: 38.3
2017-12-18
Nature Nanotechnology
Abstract:The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 mV dec−1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption1,2. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier3. Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel4–12. Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm−1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied.
materials science, multidisciplinary,nanoscience & nanotechnology