Abstract:The single event effect (SEE) sensitivity of silicon–germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (60Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

An Investigation of ELDRS in Different SiGe Processes

An Investigation of ELDRS in Different SiGe Processes

Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

An investigation of ionizing radiation damage in different SiGe processes

Comparison of Holes Trapping and Protons Transport Induced by Low Dose Rate Gamma Radiation in Oxide on Different SiGe Processes

Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Research on Total Dose Effect of Double Polysilicon Self-Aligned NPN Transistors

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Enhanced Low Dose Rate Sensitivity Analysis of Vertical BJT-STMicroelectronics

Reduced Low Dose Rate Sensitivity and its Mechanism in Bipolar Junction Transistors

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Irradiation Effects on DC Current Gain of SiGe HBT