Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Failure Analysis of the VDMOS Device with Vsd and Rds (on) Exceeded Limit Based on Reliability Physics

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Failure Analysis of a Bus Circuit under Slow Power-on Induced by Process Deviation

Sensor-Driven Reliability and Wearout Management

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Post-fabrication measurement-driven oxide breakdown reliability prediction and management.

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Fast Method To Identify The Root Cause For Ild Vbd Fail

Failure Analysis on Diode-triggered Silicon-Controlled Rectifiers by Using Nondestructive X-ray Microscopy

Life Evaluation of VDMOS Based on Threshold Voltage Shift

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

Real-time measurement and control of junction temperature of VDMOS in power cycle test

Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests

EOS Failure Analysis and Die Attach Optimization

Failure Analysis of a PLL ESD Structure Design Defect

Failure and Failure Characterization of QFP Package Interconnect Structure under Random Vibration Condition.

Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test