Abstract:Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

Near-ultraviolet Electroluminescence from ZnO-based Light-Emitting Diodes with N-Zno Nanorod/p-Gan Direct-Bonding Heterojunction Structure

Interface Control for Pure Ultraviolet Electroluminescence from Nano-Zno-based Heterojunction Devices.

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Ultraviolet Electroluminescence From Horizontal Zno Microrods/Gan Heterojunction Light-Emitting Diode Array

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Ultraviolet Electroluminescence from ZnS@ZnO Core-ShellNanowires/p-GaN Introduced by Exciton Localization

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from Nonpolar N-Zno/P-Algan Heterojunction Light-Emitting Diode on R-Sapphire

Ultraviolet Electroluminescence from Two-Dimensional ZnO Nanomesh/gan Heterojunction Light Emitting Diodes

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Enhanced waveguide-type ultraviolet electroluminescence from ZnO/MgZnO core/shell nanorod array light-emitting diodes via coupling with Ag nanoparticles localized surface plasmons

The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

Ultraviolet/orange Bicolor Electroluminescence from an N-Zno/n-gan Isotype Heterojunction Light Emitting Diode

Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

Ultraviolet Electroluminescence from N-Zno:Ga/p-zno:n Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes

Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Improvement Of The Electroluminescence Performance Of Zno Nanorods/P-Gan Light Emitting Diodes With A Zno Films Interlayer

High-Performance Ultraviolet Light-Emitting Diodes Using N-Zno/p-hbn/p-gan Contact Heterojunctions.