In Situ Studies of Catalytic Growth of SiC Nanowire

Y. Kang,P. Lu,X. Zhang,Z. Liu,J.L. Sturgeon,J. Mastovich,Z. Shan,J.C. Yang

DOI: https://doi.org/10.1017/s1431927613004534

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

What problem does this paper attempt to address?

In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

L-M Peng,Q Chen,JY Wang,MS Wang,ZY Zhang,CH Jin,XL Wei

DOI: https://doi.org/10.1017/s1431927606069510

IF: 4.0991

2006-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
In-Situ HR-TEM Characterizations on Individual Carbon Nanotubes During Its Manipulation, Deformation and Growth

Chuanhong Jin,Kazu Suenaga,Sumio Iijima

DOI: https://doi.org/10.1017/s1431927609092691

IF: 4.0991

2009-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
In Situ Growth And Characterization Of Ag And Cu Nanowires

X. Ding,G. Briggs,W. Zhou,Q. Chen,L. -M. Peng

DOI: https://doi.org/10.1088/0957-4484/17/11/S24

IF: 3.5

2006-01-01

Nanotechnology

Abstract:Nanowires of Ag and Cu have been produced from metal-loaded zeolites and micropore-containing mesoporous silica SBA-15 in situ inside the electron microscope. The structures of the nanowires have been characterized by using high-resolution electron microscopy and the compositions have been examined by energy dispersive x-ray spectroscopy. The growth of single-crystal nanowires was controlled by the electron beam density. The growth mechanism of the metal nanowires is discussed.
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

Carina B. Maliakkal,Daniel Jacobsson,Marcus Tornberg,Axel R. Persson,Jonas Johansson,Reine Wallenberg,Kimberly A. Dick

DOI: https://doi.org/10.1038/s41467-019-12437-6

IF: 16.6

2019-10-08

Nature Communications

Abstract:Abstract Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux.

multidisciplinary sciences
Electron Microscopy of Nanodevices: in Situ and Ex Situ Characterization of Structure and Transport Properties of Carbon Nanotubes

JM Zuo,T Kim,Q Chen,LM Peng,EA Olson

DOI: https://doi.org/10.1017/s1431927608082445

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Developments in in Situ Nanomechanical Testing

JD Nowak,RC Major,J Oh,Z Shan,S Asif,OL Warren

DOI: https://doi.org/10.1017/s1431927610062598

IF: 4.0991

2010-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Catalytic Synthesis and Growth Mechanism of SiC@SiO2 Nanowires and Their Photoluminescence Properties

Kai Chen,Minghao Fang,Zhaohui Huang,Juntong Huang,Yan-gai Liu

DOI: https://doi.org/10.1039/c3ce41581c

IF: 3.756

2013-01-01

CrystEngComm

Abstract:SiC@SiO2 nanowires were synthesized on a Si substrate by thermal evaporation method with an iron nitrate catalyst. The as-grown nanowires were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and photoluminescence spectroscopy at room temperature. Characterization indicated that the nanowires were composed of a crystalline SiC core with a thin amorphous SiO2 shell. The typical SiC core diameter was 50–100 nm, whereas the SiO2 shell thickness was 5–10 nm and they had a length of several hundreds of micrometers. A combined vapor–liquid–solid (VLS) base-growth and vapor–solid (VS) tip-growth mechanism is proposed for the growth mode of the as-grown SiC@SiO2 nanowires. The intensive blue-green emission properties of the core-shell SiC-SiO2 nanowires are of significant interest for their potential blue-green emitting device applications.
Simultaneous in Situ and Ex Situ Growth of Ultra-Long Si3N4 Nanobelts with Different Optical Properties

Ping Hu,Shun Dong,Minglun Li,Yuan Cheng,Boqian Sun

DOI: https://doi.org/10.1039/c6ra20150d

IF: 4.036

2016-01-01

RSC Advances

Abstract:In situandex situgrowth of ultra-long Si3N4nanobelts (NBs) was simultaneously achievedviaan effective method with the raw materials of graphite, nanosilicon and nanosilica.
Nanowires for Energy Applications: Fundamental Growth Studies

AF Marshall,IA Goldthorpe,M Koto,PC McIntyre,J Zhu,H Peng,DM Barnett,WD Nix,Y Cui

DOI: https://doi.org/10.1017/S1431927609094641

IF: 4.0991

2009-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
In situ quantitative single-molecule study of site-specific photocatalytic activity and dynamics on ultrathin g-C 3 N 4 nanosheets

Shuyang Wu,Jinn-Kye Lee,Yunpeng Lu,Rong Xu,Zhengyang Zhang,Jenica Marie L. Madridejos

DOI: https://doi.org/10.1039/d2nr06077a

IF: 6.7

2023-01-01

Nanoscale

Abstract:Single-molecule fluorescence microscopy was applied to quantify photocatalytic activities and dynamics at individual structural features of g-C 3 N 4 nanosheets at nanometer resolution.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Qiang Sun,Dong Pan,Meng Li,Jianhua Zhao,Pingping Chen,Wei Lu,Jin Zou

DOI: https://doi.org/10.1039/d0nr02892d

IF: 6.7

2020-01-01

Nanoscale

Abstract:In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
Electron Microscopy Characterization of High Yield Growth of Thin TiO2 Nanowires

H Li,J Jiao

DOI: https://doi.org/10.1017/s1431927608081555

IF: 4.0991

2008-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
In situ atomic-scale observation of monolayer graphene growth from SiC

Kaihao Yu,Wen Zhao,Xing Wu,Jianing Zhuang,Xiaohui Hu,Qiubo Zhang,Jun Sun,Tao Xu,Yang Chai,Feng Ding,Litao Sun

DOI: https://doi.org/10.1007/s12274-017-1911-x

IF: 9.9

2018-05-01

Nano Research

Abstract:Because of its high compatibility with conventional microfabrication processing technology, epitaxial graphene (EG) grown on SiC shows exceptional promise for graphene-based electronics. However, to date, a detailed understanding of the transformation from three-layer SiC to monolayer graphene is still lacking. Here, we demonstrate the direct atomic-scale observation of EG growth on a SiC (11̅00) surface at 1,000 °C by in situ transmission electron microscopy in combination with ab initio molecular dynamics (AIMD) simulations. Our detailed analysis of the growth dynamics of monolayer graphene reveals that three SiC (11̅00) layers decompose successively to form one graphene layer. Sublimation of the first layer causes the formation of carbon clusters containing short chains and hexagonal rings, which can be considered as the nuclei for graphene growth. Decomposition of the second layer results in the appearance of new chains connecting to the as-formed clusters and the formation of a network with large pores. Finally, the carbon atoms released from the third layer lead to the disappearance of the chains and large pores in the network, resulting in a whole graphene layer. Our study presents a clear picture of the epitaxial growth of the monolayer graphene from SiC and provides valuable information forfuture developments in SiC-derived EG technology.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

Qiqi Zhao,Pengchao Kang,Guoqin Chen,Pingping Wang,Zhijun Wang,Longtao Jiang,Gaohui Wu

DOI: https://doi.org/10.1016/j.matchar.2024.114142

IF: 4.537

2024-01-01

Materials Characterization

Abstract:Core-shell structured SiC/SiO2 nanowires (SiC/SiO2 NWs) were synthesized by a simple thermal evaporation method without a catalyst. The influence of the growth temperature and holding time on the microstructure and composition of the nanowires were investigated. The results indicate that within the temperature range of 1150 to 1550 degrees C, the color of SiC/SiO2 nanowires gradually transitions from pure white to off-white with increasing temperature. During this process, the average diameter of SiC/SiO2 increases from 74 nm to 291 nm, while the surface SiO2 layer thickness decreases from 17 nm to 5 nm, with nanowires can reach lengths of hundreds of micrometres. Variations in supersaturation of SiO and CO at different temperatures lead to discrepancies in nanowire diameter and SiO2 shell thickness. At 1350 degrees C, prolonged holding time enhances silicon powder reaction, resulting in increased structural disorder of the obtained SiC/SiO2 nanowires. The nanowire growth follows a vapor-solid (V-S) mechanism. Additionally, the study demonstrates that the photoluminescence (PL) characteristics of the nanowires exhibit a blue shift attributable to their nanoscale dimensions, while variations in emission spectra correlate with stacking faults, SiC diameter, and SiO2 thickness. This work may be provide a theoretical basis for preparing SiC/SiO2 nanowires with different diameters and SiO2 shell thicknesses, which is crucial for advancing the development and application of SiC/SiO2 nanoceramics.
In-Situ TEM Studies of the Deformation Mechanism of Nanocrystaline Ni

Z Shan,E A Stach,J M K Wiezorek,D M Follstaedt,J A Knapp,S X Mao

DOI: https://doi.org/10.1017/s1431927605510432

IF: 4.0991

2005-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005
In-situ Growth of Crystalline Ge Nanowires by Using Nanotubes As Template

W-Q Han,L Wu,Y Zhu,M Strongin

DOI: https://doi.org/10.1017/s1431927605505361

IF: 4.0991

2005-01-01

Microscopy and Microanalysis

Abstract:Extract HTML view is not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button. Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005
Observation of intermediate template directed SiC nanowire growth in Si-C-N systems

Min Xia,Shize Yang,Hongyan Guo,Wei Hao,Qingzhi Yan,Changchun Ge

DOI: https://doi.org/10.1088/0957-4484/23/41/415704

IF: 3.5

2012-10-19

Nanotechnology

Abstract:SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not fully understood. High resolution transmission electron microscopy and electron energy loss spectroscopy observation recorded the growth process of how Si(3)N(4) NWs were transformed into SiC NWs, and demonstrated the validity of an intermediate template directed SiC NW growth via carbothermal reduction of intermediate Si(3)N(4) NWs in a Si-C-N system. Based on this discovery, an intermediate-template growth mechanism of SiC NWs was proposed.
In situ catalytic growth of Al2O3 and Si nanowires

C.C. Tang,S.S. Fan,P. Li,M.Lamy de la Chapelle,H.Y. Dang

DOI: https://doi.org/10.1016/S0022-0248(01)00852-1

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:Al2O3 nanowires and Si nanowires with wrapping layers of amorphous Al2O3 have been synthesized by heating a mixture of Al, SiO2 and Fe2O3 catalyst supported on alumina at different temperatures. The results indicate the growth of the two nanowires competes against each other and depends on the reaction temperature. The addition of SiO2 is not essential for synthesizing Al2O3 nanowires. Al2O3 nanowires can be synthesized by directly heating Al with some catalysts when oxygen was introduced. In situ catalytic growth and silica-assisted effect are also discussed.
Observation of SiC Nanodots and Nanowires in Situ Growth in SiOC Ceramics

Xinghong Zhang,Jiaxin Gao,Changqing Hong,Jiecai Han,Wenbo Han

DOI: https://doi.org/10.1039/c3ce40924d

IF: 3.756

2013-01-01

CrystEngComm

Abstract:SiC nanodots and nanowires have been prepared by annealing silicon oxycarbide (SiOC) ceramics that had been synthesized in an Ar environment. The microstructure derivation and morphology variation of the SiC nanowires annealed at different temperatures were investigated. The experiment results showed that SiC nanodots were precipitated from the amorphous SiOC ceramics due to the phase separation process of SiOC, and the content of the SiC nanodots increased with the annealing temperature. However, the SiC nanowires formation was mainly attributed to the vapor phases and vapor-solid reaction for nucleation and growth. This process supplied a feasible way to synthesize reinforcing SiC nanowires in situ within the SiOC matrices.

In Situ Studies of Catalytic Growth of SiC Nanowire

In-situ Fabrication, Manipulation and Property Measurements of Single Nanotubes and Nanowires with Near Atomic Resolution

Ultrafast growth of single-crystalline Si nanowires

In-Situ HR-TEM Characterizations on Individual Carbon Nanotubes During Its Manipulation, Deformation and Growth

In Situ Growth And Characterization Of Ag And Cu Nanowires

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

Electron Microscopy of Nanodevices: in Situ and Ex Situ Characterization of Structure and Transport Properties of Carbon Nanotubes

Developments in in Situ Nanomechanical Testing

Catalytic Synthesis and Growth Mechanism of SiC@SiO2 Nanowires and Their Photoluminescence Properties

Simultaneous in Situ and Ex Situ Growth of Ultra-Long Si3N4 Nanobelts with Different Optical Properties

Nanowires for Energy Applications: Fundamental Growth Studies

In situ quantitative single-molecule study of site-specific photocatalytic activity and dynamics on ultrathin g-C 3 N 4 nanosheets

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Electron Microscopy Characterization of High Yield Growth of Thin TiO2 Nanowires

In situ atomic-scale observation of monolayer graphene growth from SiC

In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

In-Situ TEM Studies of the Deformation Mechanism of Nanocrystaline Ni

In-situ Growth of Crystalline Ge Nanowires by Using Nanotubes As Template

Observation of intermediate template directed SiC nanowire growth in Si-C-N systems

In situ catalytic growth of Al2O3 and Si nanowires

Observation of SiC Nanodots and Nanowires in Situ Growth in SiOC Ceramics