Simultaneous in Situ and Ex Situ Growth of Ultra-Long Si3N4 Nanobelts with Different Optical Properties

Ping Hu,Shun Dong,Minglun Li,Yuan Cheng,Boqian Sun

DOI: https://doi.org/10.1039/c6ra20150d

IF: 4.036

2016-01-01

RSC Advances

Abstract:In situandex situgrowth of ultra-long Si3N4nanobelts (NBs) was simultaneously achievedviaan effective method with the raw materials of graphite, nanosilicon and nanosilica.

What problem does this paper attempt to address?

Ultra-long Si3N4 Nanobelts Prepared by Nanosilicon, Nanosilica and Graphite

Ping Hu,Shun Dong,Cheng Fang,Yuan Cheng,Boqian Sun,Guiqing Chen

DOI: https://doi.org/10.1016/j.mssp.2016.08.020

IF: 4.1

2016-01-01

Materials Science in Semiconductor Processing

Abstract:The composition and morphology of obtained products depended on the processing atmosphere using the raw materials of nanosilicon, nanosilica and graphite, with N2-generating several millimeters long single-crystal Si3N4 nanobelts (NBs) and Ar SiC nanobelts. The width and thickness of in situ NBs ranged from 100 to 300nm and 50–100nm with an average width of 196nm, while the width and thickness of ex situ NBs fluctuated from 150 to 500nm and 80–200nm with an average width of 436nm. Alumina-assisted VS mechanism was proposed for the growth mode of in situ growth of Si3N4 nanobelts, while a combined mechanism involving VS and VLS was controlled the growth of Si3N4 nanobelts obtained on the inner walls of the crucible due to the presence of Fe2O3, which provides an effective means of fabricating ultra-long Si3N4 nanobelts on an industrial scale.
Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Growth and Optical Properties of Ultra-Long Single-Crystalline Α-Si 3 N 4 Nanobelts

W. Yang,L. Zhang,Z. Xie,J. Li,H. Miao,L. An

DOI: https://doi.org/10.1007/s00339-004-3040-0

2004-01-01

Applied Physics A

Abstract:Ultra-long single-crystalline α-Si3N4 nanobelts were synthesized by catalyst-assisted crystallization of polymer-derived amorphous silicon carbonitride (SiCN). The obtained nanobelts were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and selected-area electron diffraction. The results revealed that the α-Si3N4 nanobelts are 20 to 40 nm in thickness, 400–600 nm in width and a few hundreds of micrometers to several millimeters in length, and grow along either the [011] or the [100] direction. Intense visible photoluminescence was observed over a spectrum ranging from 1.65 to 3.01 eV, which can be attributed to defects in the α-Si3N4 structure.
Synthesis and Carbothermal Nitridation Mechanism of Ultra-Long Single Crystal Α-Si3n4 Nanobelts

Bo Wang,Xin Huang,Xiao-Nan Zhou,Qiang Zhi,Liu-Cheng Hao,Zi-Xuan Li,Shan Zhao,Bao-Qiang Hou,Jian-Feng Yang,Kozo Ishizaki

DOI: https://doi.org/10.1088/1361-6528/ab6fd7

IF: 3.5

2020-01-01

Nanotechnology

Abstract:One-dimensional Si3N4 nanostructures are desirable for constructing nanoscale electric and optoelectronic devices due to their peculiar morphologies. Herein, a facile and environmentally friendly catalyst-free method is proposed to synthesize ultra-long single crystal α-Si3N4 nanobelts via carbothermal nitridation of carbon nanotubes at 1750 °C. The obtained α-Si3N4 nanobelts with a flat surface (thickness of ∼150 nm, length of several millimeters) exhibited an extremely high aspect ratio, perfect crystal structure, and high specific surface area of 7.34-10.09 m2 g-1. In addition, the width was increased from approximately 80 nm to 8 μm by increasing the holding time from 1 to 3 h. The nanobelt formation was governed by the vapor-solid (VS) reaction between SiO vapor, N2 and carbon nanotubes, and the vapor-vapor reaction between SiO, CO and N2. The former was responsible for the initial nucleation and successive base-growth of α-Si3N4 nanotubes. The latter additionally contributed to the nanorod and subsequent proto-nanobelt formation and to the growth of the nanobelts. During high-temperature annealing at 1750 °C, the original Si3N4 nanotubes gradually transformed into nanorods, and, finally, nanobelts with stable shapes as a result of surface energy minimization.
A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

JJ Niu,J Sha,ZH Liu,J Yu,ZX Su,Q Yang,DR Yang

DOI: https://doi.org/10.1109/sim.2005.1511409

2004-01-01

Abstract:A large-scale SiNWs with the diameter of /spl sim/20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at /spl sim/1080/spl deg/C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.
Fe(NO3)3-assisted Large-Scale Synthesis of Si3N4 Nanobelts from Quartz and Graphite by Carbothermal Reduction–nitridation and Their Photoluminescence Properties

Shuyue Liu,Minghao Fang,Zhaohui Huang,Juntong Huang,Haipeng Ji,Haitao Liu,Yan-gai Liu,Xiaowen Wu

DOI: https://doi.org/10.1038/srep08998

IF: 4.6

2015-01-01

Scientific Reports

Abstract:The large-scale synthesis of Si3N4 nanobelts from quartz and graphite on a graphite-felt substrate was successfully achieved by catalyst-assisted carbothermal reduction–nitridation. The phase composition, morphology and microstructure of Si3N4 nanobelts were investigated by X-ray diffraction, Fourier transform infrared spectroscopy, field-emission scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and high-resolution transmission electron microscopy. The Si3N4 nanobelts were ~4–5 mm long and ~60 nm thick and exhibited smooth surfaces and flexible shapes. The Si3N4 nanobelts were well crystallized and grow along the [101] direction. The growth is dominated by the combined mechanisms of vapor–liquid–solid base growth and vapor–solid tip growth. The Fe(NO3)3 played a crucial role in promoting the nanobelt formation in the initial stage. The room-temperature photoluminescence spectrum of Si3N4 nanobelts consists of three emission peaks centered at 413, 437 and 462 nm, indicating potential applications in optoelectronic nanodevices.
Fe-catalyzed growth of one-dimensional α-Si 3 N 4 nanostructures and their cathodoluminescence properties

Juntong Huang,Zhaohui Huang,Shuai Yi,Yan'gai Liu,Minghao Fang,Shaowei Zhang

DOI: https://doi.org/10.1038/srep03504

IF: 4.6

2013-01-01

Scientific Reports

Abstract:Preparation of nanomaterials with various morphologies and exploiting their novel physical properties are of vital importance in nanoscientific field. Similarly to the III-N compound semiconductors, Si 3 N 4 nanostructures also could be potentially used for making optoelectronic devices. In this paper, we report on an improved Fe-catalyzed chemical vapour deposition method for synthesizing ultra-long α-Si 3 N 4 nanobelts along with a few nanowires and nanobranches on a carbon felt substrate. The ultra-long α-Si 3 N 4 nanobelts grew via a combined VLS-base and nanobranches via a combined double-stage VLS-base and VS-tip mechanism, as well as nanowires via VLS-tip mechanism. The three individual nanostructures showed variant optical properties as revealed by a cathodoluminescence spectroscopy. A single α-Si 3 N 4 nanobelt or nanobranch gave a strong UV-blue emission band as well as a broad red emission, whereas a single α-Si 3 N 4 nanowire exhibited only a broad UV-blue emission. The results reported would be useful in developing new photoelectric nanodevices with tailorable or tunable properties.
Fe-Catalyzed Growth Of One-Dimensional Alpha-Si3n4 Nanostructures And Their Cathodoluminescence Properties

Juntong Huang,Zhaohui Huang,Shuai Yi,Yan'gai Liu,Minghao Fang,Shaowei Zhang

DOI: https://doi.org/10.1038/srep03504

IF: 4.6

2013-01-01

Scientific Reports

Abstract:Preparation of nanomaterials with various morphologies and exploiting their novel physical properties are of vital importance in nanoscientific field. Similarly to the III-N compound semiconductors, Si3N4 nanostructures also could be potentially used for making optoelectronic devices. In this paper, we report on an improved Fe-catalyzed chemical vapour deposition method for synthesizing ultra-long alpha-Si3N4 nanobelts along with a few nanowires and nanobranches on a carbon felt substrate. The ultra-long alpha-Si3N4 nanobelts grew via a combined VLS-base and nanobranches via a combined double-stage VLS-base and VS-tip mechanism, as well as nanowires via VLS-tip mechanism. The three individual nanostructures showed variant optical properties as revealed by a cathodoluminescence spectroscopy. A single alpha-Si3N4 nanobelt or nanobranch gave a strong UV-blue emission band as well as a broad red emission, whereas a single alpha-Si3N4 nanowire exhibited only a broad UV-blue emission. The results reported would be useful in developing new photoelectric nanodevices with tailorable or tunable properties.
Catalyst-Assisted Synthesis And Growth Mechanism Of Ultra-Long Single Crystal Alpha-Si3n4 Nanobelts With Strong Violet-Blue Luminescent Properties

Juntong Huang,Shaowei Zhang,Zhaohui Huang,Yan Wen,Minghao Fang,Yangai Liu

DOI: https://doi.org/10.1039/c2ce26010g

IF: 3.756

2012-01-01

CrystEngComm

Abstract:Ultra-long single crystal alpha-Si3N4 nanobelts were prepared by thermal chemical vapour deposition (CVD) method. Silicon vapour from the original solid silicon raw material was allowed to react with flowing nitrogen at 1450 degrees C on the carbon felt deposited with Ni(NO3)(2). The as-prepared alpha-Si3N4 nanobelts were 40-60 nm thick, 200-300 nm wide, and up to several millimetres long. Their growth process was governed by the VLS base-growth and the VS tip-growth mechanisms. The former was responsible for the initial nucleation and proto-nanobelt (template) formation of alpha-Si3N4 and the subsequent growth along the [101] or [100] direction, and the latter for the additional growth at the tips. The synergistic function from these two growth mechanisms resulted in the formation of a large quantity of ultra-long alpha-Si3N4 nanobelts. An intense violet-blue visible photoluminescence (PL) of the as-synthesized alpha-Si3N4 nanobelts was observed at room temperature, which could be highly valuable for the future potential applications in optoelectronic nanodevices.
Facile Conversion of Silicon Nitride Nanobelts into Sandwich-Like Nanosaws II: Growth Mechanism and Optical Properties

Gang Feng Guo,Mingsheng He,Xiang Yang Kong,Hong Lin,Jianbao Li,Li-Zhen Fan

DOI: https://doi.org/10.1007/s00339-009-5403-z

2009-01-01

Applied Physics A

Abstract:In a previous paper (G.F. Guo et al., Appl. Phys. A, 2009), the microstructures of sandwich-like nanosaws have been revealed clearly. Here, the growth mechanism and optical properties of Si3N4 sandwich-like nanosaws were further investigated. It is assumed that the growth atmosphere with a large amount of N-* (active nitrogen) from the decomposition of NH3 would be the key factor for the formation of sandwich-like nanosaws during the catalyst-assisted pyrolysis of the polymeric precursors. From the characterizations of TEM together with the systematic composition analysis, we found that a large excess of nitrogen element occurred in the central "soldering" region as well as high density defects, which induced the asymmetric growth of nanoteeth on the original nanobelt sidewall, forming into a sandwich-like nanosaw morphology. The unique optical properties of sandwich-like nanosaws could be attributed from the presence of a large amount of nitrogen dangling bond defects in the central "soldering" region, and a new optical band-gap model was proposed for the interpretation of the photoluminescence spectra.
Simultaneous Growth of Si3N4 Nanobelts and Nanodendrites by Catalyst-Assisted Crystallization of Amorphous SiCN

Wy Yang,Zp Xie,Hz Miao,Lg Zhang,La An

DOI: https://doi.org/10.1016/j.jcrysgro.2004.09.099

IF: 1.8

2005-01-01

Journal of Crystal Growth

Abstract:Si3N4 nanobelts and nanodendrites were simultaneously synthesized via a novel catalyst-assisted crystallization of polymer-derived amorphous silicon carbonitride. The single crystal nanobelts, with a uniform cross-section of 20-30 nm in thickness and 100-300 nm in width, can grow up to a few millimeters in length. The nanodendrites consist of a plate-like stem and nanobelts branches of 10-20 nm thick and 50-150 nm wide. The branches that are up to 50 mu m in length grew only along the middle line of the stem with regular spacing. A growth for both nanobelts and nanodendrites is attributed to a solid-liquid-gas-solid process. (c) 2004 Published by Elsevier B.V.
Synthesis of Single-Crystalline Α-Si3n4nanobelts by Extended Vapour–liquid–solid Growth

KF Huo,YW Ma,YM Hu,JJ Fu,B Lu,YN Lu,Z Hu,Y Chen

DOI: https://doi.org/10.1088/0957-4484/16/10/050

IF: 3.5

2005-01-01

Nanotechnology

Abstract:A simple chemical method for the production of single-crystalline alpha-Si3N4 nanobelts has been developed, consisting of nitridation of a high-Si-content Fe-Si 'catalyst' by ammonia at 1300 degrees C. The as-synthesized product was characterized by means of x-ray diffraction, electron microscopy and energy-dispersive x-ray spectroscopy. The alpha-Si3N4 nanobelts have widths of 60-120 nm, thicknesses of 10-30 nm and lengths up to microns. Four intense green-blue luminescence bands at 398 nm (3.12 eV), 434 nm (2.86 eV), 492 nm (2.52 eV) and 540 nm (2.30 eV) were observed and analysed for the product, which indicates the potential applications in optoelectronics. The growth mechanism has also been speculated upon. The potential technological importance of the product, the simplicity of the preparation procedure, as well as the cheap commercial precursor of Fe-Si alloy particles makes this study both scientifically and technologically interesting.
In Situ Studies of Catalytic Growth of SiC Nanowire

Y. Kang,P. Lu,X. Zhang,Z. Liu,J.L. Sturgeon,J. Mastovich,Z. Shan,J.C. Yang

DOI: https://doi.org/10.1017/s1431927613004534

IF: 4.0991

2013-01-01

Microscopy and Microanalysis

Abstract:Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
Ultra-long SiC Nanowires Synthesized by a Simple Method

Ping Hu,Shun Dong,Kaixuan Gui,Xianzhu Deng,Xinghong Zhang

DOI: https://doi.org/10.1039/c5ra12332a

IF: 4.036

2015-01-01

RSC Advances

Abstract:Ultra-long SiC nanowires synthesized by alumina-assisted growth of the vapor–solid (VS) mechanism.
Ultrafast high-temperature sintering of silicon nitride: A comparison with the state-of-the-art techniques

Rui-Xin Luo,Milad Kermani,Zhao-Liang Guo,Jian Dong,Chun-Feng Hu,Fei Zuo,Salvatore Grasso,Bei-Bei Jiang,Guang-Lin Nie,Zheng-Qing Yan,Qiang Wang,Yan-Ling Gan,Fu-Po He,Hua-Tay Lin

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.06.021

IF: 5.7

2021-10-01

Journal of the European Ceramic Society

Abstract:Ultrafast High-temperature Sintering (UHS) has been successfully applied to fabricate the silicon nitride (Si3N4) bulks, as the first attempt of ultra-rapid consolidation of a non-oxide ceramics. At a heating rate of 875 °C/min, the bulk Si3N4 ceramic with a relative density greater than 96 % and an α-β phase transformation degree above 80 % could be obtained within 300 s. The effects of ultrafast heating on the liquid phase sintering (LPS) were also comparatively studied. Results showed that, the ultrafast heating rate and high temperature under UHS might promote the LPS system evolving to a nonequilibrium state. By comparing with other pressureless sintering processes with much lower heating rates, UHS apart from reducing the processing time, and it is also an effective method to form a bimodal microstructure composed of interlocked rod-like β-Si3N4 grains.

materials science, ceramics
Facile synthesis of silicon nitride nanowires with flexible mechanical properties and with diameters controlled by flow rate

Shun Dong,Ping Hu,Xinghong Zhang,Yuan Cheng,Cheng Fang,Jianguo Xu,Guiqing Chen

DOI: https://doi.org/10.1038/srep45538

IF: 4.6

2017-01-01

Scientific Reports

Abstract:Ultralong Si 3 N 4 nanowires (NWs) were successfully synthesized with size controlled in N 2 gas by using an efficient method. The diameters of the Si 3 N 4 NWs increased when the flow rate of N 2 gas increased, with average diameters of 290 nm from flow rates of 100 ml/min, 343 nm from flow rates of 200 ml/min and 425 nm from flow rates of 400 ml/min. Young’s modulus was found to rely strongly on the diameters of the Si 3 N 4 NWs, decreasing from approximately 526.0 GPa to 321.9 GPa; as the diameters increased from 360 nm to 960 nm. These findings provide a promising method for tailoring these mechanical properties of the NWs in a controlled manner over a wide range of Young’s modulus values. Vapour-liquid-solid (VLS) mechanisms were used to model the growth of Si 3 N 4 NWs on the inner wall of an alumina crucible and on the surface of the powder mixture. Alumina may be an effective mediator of NW growth that plays an important role in controlling the concentrations of Si-containing reactants to support the growth of NWs on the inner wall of the alumina crucible. This approach offers a valuable means for preparing ultralong Si 3 N 4 NWs doped with Al with unique properties.
A Novel Approach To Silicon-Nanowire-Assisted Growth Of High-Purity, Single-Crystalline Beta-Si3n4 Nanowires

Jun-Jie Niu,Jian-Nong Wang

DOI: https://doi.org/10.1002/cvde.200706593

2007-01-01

Chemical Vapor Deposition

Abstract:Bundles of single-crystalline beta-Si3N4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The beta-Si3N4 NWs obtained have a small diameter of similar to 30 nm, a single-crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue-shift of the peaks in Raman scattering compared to bulk beta-Si3N4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template-assisted growth model is suggested.
Growth Mechanism and PL Properties of Β-Sialon Nanobelts/nanowires Synthesized by a Process of Aluminothermic Reduction Nitridation of Zircon

Haitao Liu,Fanrong Meng,Qing Li,Zhaohui Huang,Shunqin Luo,Li Yin,Minghao Fang,Yan-Gai Liu,Xiaowen Wu

DOI: https://doi.org/10.1039/c4ce02245a

IF: 3.756

2015-01-01

CrystEngComm

Abstract:Large scale β-sialon nanobelts/nanowires and ZrN–sialon composite powders were prepared via aluminothermic reduction nitridation with flowing N2.
Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

Xibao Yang,Hang Lv,Shuanglong Chen,Qiushi Wang,Linhai Jiang

DOI: https://doi.org/10.1007/s12633-023-02538-9

IF: 3.4

2023-06-11

Silicon

Abstract:Ultrafine Si embedded SiO 2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO 2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO 2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may also be due to the quantum confinement effect caused by the small size. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.

materials science, multidisciplinary,chemistry, physical
In Situ Growth And Characterization Of Ag And Cu Nanowires

X. Ding,G. Briggs,W. Zhou,Q. Chen,L. -M. Peng

DOI: https://doi.org/10.1088/0957-4484/17/11/S24

IF: 3.5

2006-01-01

Nanotechnology

Abstract:Nanowires of Ag and Cu have been produced from metal-loaded zeolites and micropore-containing mesoporous silica SBA-15 in situ inside the electron microscope. The structures of the nanowires have been characterized by using high-resolution electron microscopy and the compositions have been examined by energy dispersive x-ray spectroscopy. The growth of single-crystal nanowires was controlled by the electron beam density. The growth mechanism of the metal nanowires is discussed.

Simultaneous in Situ and Ex Situ Growth of Ultra-Long Si3N4 Nanobelts with Different Optical Properties

Ultra-long Si3N4 Nanobelts Prepared by Nanosilicon, Nanosilica and Graphite

Ultrafast growth of single-crystalline Si nanowires

Growth and Optical Properties of Ultra-Long Single-Crystalline Α-Si 3 N 4 Nanobelts

Synthesis and Carbothermal Nitridation Mechanism of Ultra-Long Single Crystal Α-Si3n4 Nanobelts

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Fe(NO3)3-assisted Large-Scale Synthesis of Si3N4 Nanobelts from Quartz and Graphite by Carbothermal Reduction–nitridation and Their Photoluminescence Properties

Fe-catalyzed growth of one-dimensional α-Si 3 N 4 nanostructures and their cathodoluminescence properties

Fe-Catalyzed Growth Of One-Dimensional Alpha-Si3n4 Nanostructures And Their Cathodoluminescence Properties

Catalyst-Assisted Synthesis And Growth Mechanism Of Ultra-Long Single Crystal Alpha-Si3n4 Nanobelts With Strong Violet-Blue Luminescent Properties

Facile Conversion of Silicon Nitride Nanobelts into Sandwich-Like Nanosaws II: Growth Mechanism and Optical Properties

Simultaneous Growth of Si3N4 Nanobelts and Nanodendrites by Catalyst-Assisted Crystallization of Amorphous SiCN

Synthesis of Single-Crystalline Α-Si3n4nanobelts by Extended Vapour–liquid–solid Growth

In Situ Studies of Catalytic Growth of SiC Nanowire

Ultra-long SiC Nanowires Synthesized by a Simple Method

Ultrafast high-temperature sintering of silicon nitride: A comparison with the state-of-the-art techniques

Facile synthesis of silicon nitride nanowires with flexible mechanical properties and with diameters controlled by flow rate

A Novel Approach To Silicon-Nanowire-Assisted Growth Of High-Purity, Single-Crystalline Beta-Si3n4 Nanowires

Growth Mechanism and PL Properties of Β-Sialon Nanobelts/nanowires Synthesized by a Process of Aluminothermic Reduction Nitridation of Zircon

Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

In Situ Growth And Characterization Of Ag And Cu Nanowires