Abstract:The charge-trapping memory devices with a structure Pt/Al 2 O 3 /(Ta 2 O 5 ) x (TiO 2 ) 1 − x /Al 2 O 3 /p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate. The memory device with a composite charge storage layer (Ta 2 O 5 ) 0.5 (TiO 2 ) 0.5 shows a density of trapped charges 3.84 × 10 13 /cm 2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 10 4 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta 2 O 5 ) x (TiO 2 ) 1 − x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device.

Y-Doped BaTiO 3 As a Charge-Trapping Layer for Nonvolatile Memory Applications

Title Improved Charge-Trapping Characteristics of BaTiO 3 by ZrDoping for Nonvolatile Memory Applications

Improved Charge-Trapping Characteristics of $ \hbox{batio}_{3}$ by Zr Doping for Nonvolatile Memory Applications

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Charge-Trapping Characteristics of Batio3 with and Without Nitridation for Nonvolatile Memory Applications

Improved Charge-Trapping Characteristics of ZrO 2 by Al Doping for Nonvolatile Memory Applications

Improved Performance of Hf-Doped Batio3 As Charge-Traping Layer for Flash Memory Applications

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

Charge-trapping characteristics of BaTiO 3 with various Zr contents for flash memory applications

Fluorinated $\hbox{srtio}_{3}$ As Charge-Trapping Layer for Nonvolatile Memory Applications

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Title Charge-Trapping Characteristics of BaTiO 3 with and withoutNitridation for Nonvolatile Memory Applications

Nb-Doped &Lt;inline-Formula> &Lt;tex-Math Notation="tex">$\hbox{la}_{2}\hbox{o}_{3} $&Lt;/tex-Math></inline-formula> As Charge-Trapping Layer for Nonvolatile Memory Applications

Nb-doped Ga2O3 As Charge-Trapping Layer for Nonvolatile Memory Applications

Nitrided SrTiO3 As Charge-Trapping Layer for Nonvolatile Memory Applications

High-performance Programmable Memory Devices Based on Co-Doped BaTiO3.

Improved Performance by Using TaON/SiO2 As Dual Tunnel Layer in Charge-Trapping Nonvolatile Memory

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer