Abstract:Objective: The aim of the present study was to evaluate the chemical-mechanical polishing (CMP) effect of cerium oxide (ceria [CeO2]) as an abrasive to polish lithium disilicate glass ceramic. Materials and methods: For the polishing experiment, 22 lithium disilicate glass ceramic samples were prepared, polished with sandpaper using a polishing machine, their surface roughness (Ra) was measured using a profilometer, and they were randomly divided into two groups (n = 10). The samples were polished for 30 seconds with ceria paste with different ratios of deionized water:ceria by weight: 1:0.5 (C0.5) and 1:1 (C1) according to their group and the Ra values were determined. The Ra measurement was repeated after an additional 30 seconds of polishing until 120 seconds of polishing had been performed. The surface images of the postpolishing (120 seconds) samples were obtained using scanning electron microscopy (SEM) to evaluate the surface morphology. For the adsorption experiment, 10 lithium disilicate glass ceramic specimens were prepared and soaked in 50-mL deionized water. After 24 hours, the specimens were removed. Each liquid sample was divided in two halves. The first half was stored and ceria particles were added into the second half. After 24 hours, the solutions were filtered. The silicon concentration in the liquid samples was analyzed using inductively coupled plasma-optical emission spectrometry. Statistical analysis: The difference in mean Ra value between groups was analyzed using two-way repeated analysis of variance (ANOVA) and the difference in mean silica concentrations before and after adding ceria particles was analyzed using the paired t-test. A p-value of <0.05 was considered statistically significant. Results: Ra decreased as the ratio of ceria and polishing time increased. The surface morphology of the samples analyzed by SEM corresponded with their Ra values. The mean silicon concentration after adding ceria particles was significantly decreased (p < 0.05). Conclusion: Using a ceria-polishing paste to polish lithium disilicate glass ceramic generates a significantly smoother surface compared with baseline roughness. Moreover, CeO2 has a mechanical action and chemical reaction with lithium disilicate glass ceramic. Therefore, it can be used as a CMP paste to create a smooth surface.

Chemical Mechanical Polishing on Extremely Low Expansion Glass Ceramic Wafers

Chemical Mechanical Polishing of Glass Disk Substrates: Preliminary Experimental Investigation

Atomic surface induced by novel green chemical mechanical polishing for aspheric thin-walled crucibles with large diameters

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Angstrom surface with high material removal rate for quartz glass induced by silk dissolved novel green chemical mechanical polishing

Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass

Novel green chemical mechanical polishing of fused silica through designing synergistic CeO 2 /h-BN abrasives with lubricity

Trivalent lanthanum and ytterbium doped meso-silica/ceria abrasive systems toward chemical mechanical polishing (CMP) and ultraviolet irradiation-assisted photochemical mechanical polishing (PCMP)

Chemical mechanical polishing for sapphire wafers using a developed slurry

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Cerium Oxide Polishes Lithium Disilicate Glass Ceramic via a Chemical-Mechanical Process

Preparation of α-alumina/polymethacrylic acid composite abrasive and its CMP performance on glass substrate

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Progress in Material Removal Mechanisms of Surface Polishing with Ultra Precision

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Polymer coated γ-aminopropyltriethoxysilane-modified α-alumina non-spherical nanocomposite abrasives and their chemical mechanical polishing behavior on glass-ceramic substrate

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials