Improvement in environmental reliability of amorphous indium-gallium-zinc-oxide thin-film transistors by CF 4 plasma treatment

Fan-Ping Tseng,Ching-Lin Fan

DOI: https://doi.org/10.1109/OMN.2016.7565940

2016-01-01

Abstract:The environmental effect of the a-IGZO TFTs with and without CF 4 plasma treatment was investigated. Compared of the untreated TFTs, the TFTs with CF 4 plasma treatment have higher immunity against environmental molecules.

What problem does this paper attempt to address?

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Xiang Liu,Lisa Ling Wang,Hehe Hu,Xinhong Lu,Ke Wang,Gang Wang,Shengdong Zhang

DOI: https://doi.org/10.1109/led.2015.2456034

IF: 4.8157

2015-01-01

IEEE Electron Device Letters

Abstract:The performance and stability improvement of back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) by post CF4+O2 plasma treatment is investigated. It is revealed that the metal residue of the wet-etching of source/drain electrodes degrades TFT performance and aggravates the positive threshold voltage (Vth) shift under positive gate bias stress. It is demonstrated that the CF4+O2 plasma treatment effectively removes the metal residue and remarkably improves device performance and the Vth stability. This improvement is attributed to oxygen vacancy repairing at the back channel interface of the a-IGZO TFT by the O free radicals generated by the O2 plasma.
Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Wei-Sheng Liu,Chih-Hao Hsu,Yu Jiang,Yi-Chun Lai,Hsing-Chun Kuo

DOI: https://doi.org/10.1088/1361-6641/abe6da

IF: 2.048

2021-02-26

Semiconductor Science and Technology

Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Yana Gao,Jianguo Lu,Jianhua Zhang,Xifeng Li

DOI: https://doi.org/10.1016/j.jallcom.2015.06.049

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Thin film transistors (TFTs) using solution-processed aluminum indium zinc oxide (AIZO) as a channel layer were fabricated in this study. Influence of annealing temperatures on solution processed AIZO thin films surface, structural and chemical properties had been intensively investigated. The AIZO films existed in an amorphous phase even through the annealing temperature reach up to 500 degrees C. The as-prepared AIZO films with surface root-mean-square roughness values less than 0.6 nm were uniform and smooth. As the annealing temperatures exceeded 400 degrees C, the impurities and hydroxyl groups in the AIZO films had almost no change, demonstrating that the AIZO oxide formation was almost completed. Above all, the solution processed AIZO TFTs exhibit excellent device performance with high saturation mobility of 20.8 cm(2)/V s, threshold voltage of -0.39 V, small subthreshold swing of 0.13 V/dec and high on/off current ratio of 5 x 10(6). (C) 2015 Elsevier B.V. All rights reserved.
Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Cong Peng

DOI: https://doi.org/10.1109/TED.2023.3244903

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thinfilm transistors (TFTs) was improved using a carbon tetrafluoride (CF4) plasma treatment of the back channel (BC) after the wet-etching process of source-drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of H2O2-based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from 7.3 x 10(5 )to 1.1 x 10(10), and the threshold voltage shift of negative bias illumination stability (NBIS) improves from -3.4 to -0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.
Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Chen Wang,Cong Peng,Pan Wen,Meng Xu,Longlong Chen,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/ted.2023.3244903

IF: 3.1

2023-03-29

IEEE Transactions on Electron Devices

Abstract:The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was improved using a carbon tetrafluoride (CF plasma treatment of the back channel (BC) after the wet-etching process of source–drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of -based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from to , and the threshold voltage shift of negative bias illumination stability (NBIS) improves from −3.4 to −0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.

engineering, electrical & electronic,physics, applied
Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF 4 reactive sputtering

Ching-Lin Fan,Tzu-Chun Hsin,Xiang-Wei Yu,Zhe-Chen Lin

DOI: https://doi.org/10.1016/j.mssp.2023.108068

IF: 4.1

2023-12-25

Materials Science in Semiconductor Processing

Abstract:We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO:F/IZTO layers. The fluorine in IZTO:F film was in-situ doped through IZTO deposition using RF sputtering with CF 4 as the reactive gas. Furthermore, the electrical characteristics of the IZTO TFTs with varied IZTO:F/IZTO layer thickness ratios were investigated to optimize the IZTO:F thickness ratio in the channel. The TFTs with the optimal IZTO:F/IZTO layer thickness demonstrated significantly enhanced reliability under various stress conditions because the doped fluorine can occupy oxygen vacancies and provide stronger bonding with the metal ions in the active layer. Specifically, the TFT threshold voltage shift (ΔV th ) with and without IZTO:F layers were 2.72 V and 5.77 V under positive bias stress (PBS), respectively, which is 2.12 times reduction. The ΔV th was also decreased from −2.23 V to −0.30 V under negative bias stress (NBS), which shows an improvement of 7.43 times. In addition, these devices also have enhanced reliability under negative bias illumination stress (NBIS). The fluorinated IZTO TFTs with the IZTO:F/IZTO layer exhibits enhanced reliability as a result of the defects passivation in the doped fluorine but also have a low manufacturing cost due to in-situ fluorine doping with no additional doping step. It is believed that fluorinated IZTO TFT with the enhanced device reliability will be a good candidate to support the requirements for the next-generation display backplanes.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Ching-Lin Fan,Yan-Quan Chen,Xiang-Wei Yu,Yung-Sheng Tsai

DOI: https://doi.org/10.1016/j.mssp.2024.108954

IF: 4.1

2024-09-30

Materials Science in Semiconductor Processing

Abstract:The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×10 12 cm -2 to 6.53×10 11 cm -2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm 2 /V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×10 7 to 7.31×10 8 . In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of V GS = 30 V and negative gate-bias stress (NGBS) of V GS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔV TH ) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Yi Liang,Dedong Han,Wen Yu,Junchen Dong,Huijin Li,Yi Wang

DOI: https://doi.org/10.1109/ISNE.2019.8896549

2019-01-01

Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .
Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Huan Yang,Xiaoliang Zhou,Shengdong Zhang,Gongtan Li,Shan Li

DOI: https://doi.org/10.1109/cad-tft.2018.8608051

2018-01-01

Abstract:This work investigates the effects of O 2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O 2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.
Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Yu-Fa Tu,Cheng-Ling Chiang,Ting-Chang Chang,Yang-Hao Hung,Li-Chuan Sun,Chuan-Wei Kuo,Hong-Yi Tu,Hui-Chun Huang,Chen-Hsin Lien

DOI: https://doi.org/10.1109/ted.2022.3166745

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:In this study, the influence of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with different passivation (PV) layers under positive bias stress (PBS) in a moist environment and hot-carrier stress (HCS) is investigated. The Al2O3-passivated device can effectively suppress H2O molecule absorption, but the HCS reliability is inferior. The degradation behavior is attributed to the high permittivity of Al2O3, which lacks oxygen, and the oxygen from the etch stop layer (ESL) diffuses into the Al2O3 film during the process, causing the generation of oxygen vacancies in the ESL. Therefore, an optimal outer Al2O3-passivated device is proposed, in which the Al2O3 film is deposited away from the ESL. With this optimal PV structure, both the results under PBS in a moist environment and HCS can achieve good stability in the outer Al2O3-passivated device.

engineering, electrical & electronic,physics, applied
Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Haifeng Pu,Qianfei Zhou,Lan Yue,Qun Zhang

DOI: https://doi.org/10.1016/j.apsusc.2013.07.007

IF: 6.7

2013-01-01

Applied Surface Science

Abstract:We reported the impact of oxygen plasma treatment on solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Plasma-treated devices showed higher mobility, larger on/off current ratio, but a monotonically increased SS with plasma treatment time as well. The phenomenon was mainly due to two components in oxygen plasma, atomic oxygen and O-2(+), according to the photoluminescence (PL) measurement. Atomic oxygen reacted with oxygen vacancies in channel layer resulting in an improved mobility, and O-2(+) tends to aggregated at the surface acting as trapping states simultaneously. Our study suggests that moderate oxygen plasma treatment can be adopted to improve the device performance, while O-2(+) should be eliminated to obtain good interfacial states. (C) 2013 Elsevier B.V. All rights reserved.
Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

Wei-Sheng Liu,Chih-Hao Hsu,Yu Jiang,Yi-Chun Lai,Hsing-Chun Kuo

DOI: https://doi.org/10.3390/membranes12010049

IF: 4.562

2021-12-30

Membranes

Abstract:In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.

engineering, chemical,materials science, multidisciplinary,polymer science,chemistry, physical
N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Geng-Wei Chang,Ting-Chang Chang,Jhe-Ciou Jhu,Tsung-Ming Tsai,Yong-En Syu,Kuan-Chang Chang,Fu-Yen Jian,Ya-Chi Hung,Ya-Hsiang Tai

DOI: https://doi.org/10.1016/j.surfcoat.2012.04.086

IF: 4.865

2013-01-01

Surface and Coatings Technology

Abstract:N2O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properties at high temperature. The abnormal electrical properties are explained by the energy band diagrams for both forward and reverse sweep. Above 400K, holes can be generated from trap-assisted transition, and drift to the source side which induces source barrier lowering. The source side barrier lowering enhances electron injection from the source to channel and causes an apparent sub-threshold leakage current. This phenomenon, which is experimentally verified, only appears in the device without N2O plasma treatment, but not in the device with N2O plasma treatment. The results suggested that the density of states for a-IGZO with N2O plasma treatment is much lower than that without plasma treatment.
Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Ching-Lin Fan,Ming-Chi Shang,Bo-Jyun Li,Yu-Zuo Lin,Shea-Jue Wang,Win-Der Lee,Bohr-Ran Hung

DOI: https://doi.org/10.3390/ma8041704

IF: 3.4

2015-04-13

Materials

Abstract:This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO₂ combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO₂ deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Shiben Hu,Kuankuan Lu,Honglong Ning,Rihui Yao,Yanfen Gong,Zhangxu Pan,Chan Guo,Jiantai Wang,Chao Pang,Zheng Gong,Junbiao Peng

DOI: https://doi.org/10.3390/nano11020522

IF: 5.3

2021-02-18

Nanomaterials

Abstract:In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs

Qing Wu Yin,Wen Dong Lian,Jin Chuan Li,Jia,Sheng Dong Zhang,Wei Ran Cao

DOI: https://doi.org/10.4028/p-1w1unq

2022-01-01

Materials Science Forum

Abstract:In this work, we investigated the effect of thin film encapsulation on Vth shift in a-IGZ0 TFTs. The result shows that decreasing the NH3 flow rate of deposited SiON films, the trend of Vth shift under the operation mode can vary from negative to positive direction, which can be attributed to lower amount of hydrogen diffused from SiON to the a-IGZO TFTs. Beside, we designed the TFE with stable inorganic-organic-inorganic stack structure, of which the CVD1 deposited with low NH3 flow rate and the CVD2 with high barrier property, and a 16.9-inch high performance flexible OLED panel with controlled Vth shift and RA lifetime over 475 h was achieved at the condition of 85 °C and 85% RH. This study demonstrates the influence of TFE on a-IGZO TFTs, and offers an optimized TFE structure which promises both electrical characteristics and reliability for flexible OLEDs.
Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Wen Zhang,Zenghui Fan,Ao Shen,Chengyuan Dong

DOI: https://doi.org/10.3390/mi12121551

IF: 3.4

2021-12-12

Micromachines

Abstract:We investigated the electrical performance and positive bias stress (PBS) stability of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with SiOx passivation layers after the post-annealing treatments in different atmospheres (air, N2, O2 and vacuum). Both the chamber atmospheres and the device passivation layers proved important for the post-annealing effects on a-IGZO TFTs. For the heat treatments in O2 or air, the larger threshold voltage (VTH) and off current (IOFF), smaller field-effect mobility (μFE), and slightly better PBS stability of a-IGZO TFTs were obtained. The X-ray photoemission spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) measurement results indicated that the oxygen atoms from the ambience led to less oxygen vacancies (VO) and more oxygen-related defects in a-IGZO after the heat treatments in O2 or air. For the annealing processes in vacuum or N2, the electrical performance of the a-IGZO TFTs showed nearly no change, but their PBS stability evidently improved. After 4500 seconds’ stressing at 40 V, the VTH shift decreased to nearly 1 V. In this situation, the SiOx passivation layers were assumed to effectively prevent the oxygen diffusion, keep the VO concentration unchanged and refuse the oxygen-related defects into the a-IGZO films.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Fei Shan,Han-Lin Zhao,Xiao-Lin Wang,Jae-Yun Lee,Sung-Jin Kim

DOI: https://doi.org/10.1039/d2tc01053d

IF: 6.4

2022-05-04

Journal of Materials Chemistry C

Abstract:Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influences of various ambient effects and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobic, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt. % F–P passivated IGZO TFTs showed improved performance in saturation mobility ( μ sat ) from 6.23 ± 0.21 to 7.02 ± 0.38 cm 2 /Vs, an on-off current ratio ( I on / I off ) from (4.05 ± 0.84) × 10 5 to (3.75 ± 2.32) × 10 8 , and a subthreshold swing ( SS ) from 1.79 ± 0.30 to 0.41 ± 0.04 V/decade compared to the pristine device without the F–P PVL. After the 15-day stability test via ambient effects, μsat increased from 7.02 ± 0.38 to ~8 cm 2 /Vs; I on / I off increased from (3.75 ± 2.32) × 10 8 to ~10 10 and the SS values were maintained at a low level (≤ 0.6 V/dec.). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H 2 O and O 2 . With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices.

materials science, multidisciplinary,physics, applied
Comparison of N-2 and Ar Plasma Treatment for Source/Drain Formation in Self-Aligned Top-Gate Amorphous Ingazno Thin Film Transistor

Hongjuan Lu,Chongyang Ren,Xiang Xiao,Yuxiang Xiao,Cuicui Wang,Shengdong Zhang

DOI: https://doi.org/10.1109/am-fpd.2016.7543642

2016-01-01

Abstract:We propose a self-aligned top-gate amorphous InGaZnO thin film transistor (a-IGZO TFT) with source/drain treated by N 2 plasma. By comparing the performances of the self-aligned top-gate a-IGZO TFTs with N 2 and Ar plasma treatment, it is found that N 2 plasma treatment can effectively decrease the resistivity of the a-IGZO. The TFTs with N 2 plasma treated source/drain have the comparable electrical performance and superior stress stability compared to the Ar plasma treated one. The fabricated self-aligned top-gate a-IGZO TFT with N 2 plasma treatment exhibits field-effect mobility of 5.1cm 2 /V·s, threshold voltage of -0.33 V, a subthreshold swing of 0.26V/dec, and a shift of V th of -0.65 V and 0.52 V under PBS and NBS with gate-bias stress voltage of+30V respectively.
Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Ho-young Jeong,Bok-young Lee,Young-jang Lee,Jung-il Lee,Myoung-su Yang,In-byeong Kang,Mallory Mativenga,Jin Jang

DOI: https://doi.org/10.1063/1.4862320

IF: 4

2014-01-13

Applied Physics Letters

Abstract:We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n+ a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10−3 Ω cm after treatment, and then it increases to 7.92 × 10−2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n+a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n+ a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm2/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H2 plasma treatment degrades significantly after 300 °C annealing.

physics, applied

Improvement in environmental reliability of amorphous indium-gallium-zinc-oxide thin-film transistors by CF 4 plasma treatment

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF<sub>4</sub> Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF 4 reactive sputtering

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Comparison of N-2 and Ar Plasma Treatment for Source/Drain Formation in Self-Aligned Top-Gate Amorphous Ingazno Thin Film Transistor

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer