Abstract:It is well known that, femtosecond-laser pulses are easy to spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics, but not on non-transparent semiconductors. Nevertheless, in the study we demonstrate that by high-NA 800-nm femtosecond-laser direct writing with controlling the pulse energy and scanning speed in the near-damage-threshold regime, polarization-dependent deep-subwavelength single grooves with linewidths of ~180 nm can be controllably prepared on Si. Generally, the single-groove linewidth increases slightly with the increase of pulse energy and the decrease of scanning speed, whereas the single-groove depth significantly increases from ~300 to ~600 nm with the decrease of scanning speed, or even over 1 μm with the multi-processing, indicating the characteristics of transversal clamping and longitudinal growing of such deep-subwavelength single grooves. Then, EDS composition analysis of the near-groove region confirms that the single-groove formation tends to be an ultrafast, non-thermal ablation process, and the oxidized deposits nearby the grooves are easy to clean up. Furthermore, the results showing the strong dependence of groove orientation on laser polarization, and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves, both indicate that the extraordinary field enhancement of strong polarization sensitiveness in the deep-subwavelength groove plays an important role for single-groove growth with high stability and collimation.

Parallel Fabrication of High-Aspect-ratio All-Silicon Grooves Using Femtosecond Laser Irradiation and Wet Etching

Fabrication of high-aspect-ratio fused silica microstructures with large depths using Bessel-beam femtosecond laser-assisted etching

Fabrication of Micro Grooves on Silicon by Micro Optical Fiber Enhanced Pulse Laser Irradiation

Fabrication of highly homogeneous and controllable nanogratings on silicon via chemical etching-assisted femtosecond laser modification

Fabrication of ultrahigh-aspect-ratio and periodic silicon nanopillar arrays using dislocation lithography and deep reactive-ion etching

Fabrication of Optofluidic Systems Using Isotropic Wet Etched Masters in < 111 > Silicon Wafer

Mask-Free Construction of Three-Dimensional Silicon Structures by Dry Etching Assisted Gray-Scale Femtosecond Laser Direct Writing

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography

Controllable Fabrication of Gallium Ion Beam on Quartz Nanogrooves

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Deep-subwavelength single grooves prepared by femtosecond laser direct writing on Si

Deepening of nanograting structures on Si by a two-step laser spatial-selective amorphization strategy combined with chemical etching

Formation of Array Microstructures on Silicon by Multibeam Interfered Femtosecond Laser Pulses

Convex Silica Microlens Arrays Via Femtosecond Laser Writing.

High Aspect Ratio Si Etching Technique and Application

Fabrication of ultra-high aspect ratio silicon grating using an alignment method based on a scanning beam interference lithography system

Fabrication of High Precision Self-Aligned V-Grooves Integrated on Silica-on-Silicon Chips

Efficient Fabrication of a High-Aspect-ratio AFM Tip by One-Step Exposure of a Long Focal Depth Holographic Femtosecond Axilens Beam

Wafer-Scale Fabrication of V-Shaped Silicon Nano-Slit Arrays

Laser Etching of Groove Structures with Micro-Optical Fiber-Enhanced Irradiation