Abstract:Epitaxial lift-off (ELO) of high-quality GaN layers allows for integration with a variety of materials enabling improved performance, reduced costs, and development of new electronics. Of the ELO technologies, two-dimensional (2D) material-based lift-off offers great promise but is still in the early stages of development and has yet to demonstrate the scale and yield of other ELO technologies. Here, we demonstrate the potential of this process's scalability, speed, and yield through epitaxial growth and lift-off of 4-in. GaN films using a 2D boron nitride (BN) van der Waals (vdW) buffer layer. Since the BN layer acts as the growth template and the mechanical release layer, both the quality and adhesion of the GaN layer are correlated with the BN morphology and uniformity. Detailed spectroscopic mapping demonstrates excellent BN uniformity, which translates into growth of high-quality GaN as shown in mapping of the x-ray rock curves (XRCs), atomic force microscopy, and photoluminescence. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal abrupt chemically distinct interfaces between the sapphire, BN, and AlN/GaN layers essential for efficient lift-off. Combined with the BN/GaN vdW heterostructure, Ni spalling is used to efficiently lift-off and transfer a full 4-in. GaN layer. Post transfer characterization of a 1.9 μm thick GaN layer transferred to a SiO2/Si wafer shows a very minimal change in the XRC and photoluminescence. Strain measurements before and after transfer show that the process fully relaxes residual strain formed in the GaN during high-temperature growth. This work highlights the potential for industry scalability of an exciting 2D material-based lift-off technology, which can facilitate higher power and more efficient radio frequency devices.

Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-off

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Electrochemical Lift-off of GaN Films for GaN-on-GaN Technology

Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Schottky Rectifiers Fabricated on Bulk Gan Substrate Analyzed by Electron-Beam Induced Current Technique

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

High-Voltage Vertical GaN P-N Diodes by Epitaxial Liftoff from Bulk GaN Substrates

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

Demonstration and Modeling of Unipolar-Carrier-conduction GaN Schottky-pn Junction Diode with Low Turn-on Voltage

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Low Leakage Schottky Rectifiers Fabricated on Homoepitaxial Gan

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*

Laser slicing: a thin film lift-off method for GaN-on-GaN technology