Tuning Field Emission Properties of Tungsten Trioxide Nanowires for Flat Panel X-ray Source Application

Paibin Xie,Daokun Chen,Guofu Zhang,Zhipeng Zhang,Fei Liu,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen
DOI: https://doi.org/10.1109/ivnc.2016.7551536
2016-01-01
Abstract:For application in a diode flat-panel X-ray source, large area patterned WO 3 nanowires were grow on indium-tin-oxide (ITO) glass substrate by using a thermal oxidation method. It is found that the thickness of the ITO layer influences the length of the prepared WO 3 nanowires. The phenomenon is attributed to the change of stress of the ITO glass substrate. The field emission properties of WO 3 nanowires were tuned by varying the thickness of ITO layer.
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