A Low-Temperature Method to Selected-Area Synthesis of Tungsten Oxide Nanowire Arrays and Investigation on Their Field Emission Properties

LIU Fei,GUO Tong-yi,LI Li,LI Li-fang,GAN Hai-bo,CHEN Jun,DENG Shao-zhi,XU Ning-sheng
DOI: https://doi.org/10.16540/j.cnki.cn11-2485/tn.2012.03.005
2012-01-01
Abstract:WO3-x(0≤x<3) nanostructures are very attractive for field emitters because their low threshold field,high aspect ratio and high current density capacity.But in their development,there are many technique problems existing in their applications,such as high-temperature needed for growing,mixed phases conexisting which cause nonuniform.By adjusting the type of catalysts,the controlled growth of micro-patterned WO2 and WO3 nanowire arrays have been firstly realized at low temperature(450 to 600℃).It is found that the turn-on field and threshold field of micro-patterned WO2 nanowire arrays is respectively 0.8 MV/m and 2.46 MV/m.And the turn-on field and threshold field of micro-patterned WO3 nanowire arrays are found to be 0.65 MV/m and 2.9 MV/m,respectively.Their very excellent FE performance suggests that this novel growth method is a useful technique for low-temperature preparation of micro-patterned nanoemitter cathode arrays.
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