Abstract:Amorphous silicon (α-Si) thin films are widely used as electrical, optical and mechanical materials mainly synthesized by chemical vapor deposition (CVD) methods such as plasma-enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition. However, the physical vapor deposition ways which are seldom studied may demonstrate a proper choice for the deposition of α-Si thin films as the structural material for micro-electromechanical systems application. One of the CVD methods of e-beam thermal evaporation was used for the deposition of α-Si thin films in this study. All samples of deposited α-Si thin films had smooth surface with the root mean square surface roughness less than 1.6 nm. The α-Si film with a relatively low stress of about 250 MPa was obtained with a film thickness of 500 nm at a deposition rate of 4.7−6.1 Å/s. The film thickness variation of α-Si deposited on a 4 inch white glass had a 0.78 % uniformity. The 150-nm-thick α-Si film showed a good conformality on the patterned 500-nm-thick Mo film and it had a leak current density of 2.8 × 10−3 A/cm2 under a 5 V bias voltage. The film’s Young’s modulus and hardness were extracted by a nano-indenter with values of 71.6 and 7.9 GPa, respectively. Characteristics of evaporated α-Si films and PECVD α-Si:H films were also compared.

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