Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

MoSe2 Thin Films and Thin-Film Transistors Prepared by Electron Beam Evaporation

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics

Large-area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates.

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Synthesis of Uniform Two-Dimensional MoS 2 Films Via Thermal Evaporation

Synthesis of uniform two-dimensional MoS2 films via thermal evaporation

Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

Thermal Conductivity of Large-Area Polycrystalline MoSe 2 Films Grown by Chemical Vapor Deposition

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Etching-free Patterning Method for Electrical Characterization of Atomically Thin MoSe2 Films Grown by Chemical Vapor Deposition.

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

High Quality Atomically Thin PtSe2 Films Grown by Molecular Beam Epitaxy

Large-area Synthesis of Monolayer MoSe2 Films on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition

Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting.