Abstract:CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the presence of an external electric field are reported. While all materials of the MoWSeS family share the same qualitative properties, their individual values can differ strongly, for example, the spin-orbit splitting in WSe2 reaches the value of 428 meV, nearly three times that of MoS2. Further, we discuss the effect of strain on the electronic properties (straintronics). While MoWSeS single layers are very robust against external electric fields, bilayers show a linear reduction of the band gap, even reaching a semiconductor-metal phase transition, and an increase of the spin-orbit splitting from zero to the monolayer value at rather small fields. Strain is yet another possibility to control the band gap in a linear way, and MoWSeS monolayers become metallic at strain values of ∼10%. The density-functional based tight-binding model is a useful tool to investigate the electronic and structural properties, including electron conductance, of large MoS2 structures, which show spontaneous rippling in finite-temperature molecular dynamics simulations. Structural defects in MoS2 result in anisotropy of the electric conductivity. Finally, DFT predictions on the properties of noble metal dichalcogenides are presented. Most strikingly, 1T PdS2 is an indirect band gap semiconductor in its monolayer form but becomes metallic as a bilayer.

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Field Effect Properties of Single-Layer MoS 2(1− X ) Se 2 X Nanosheets Produced by a One-Step CVD Process

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

Metastable MoS2: crystal structure, electronic band structure, synthetic approach and intriguing physical properties.

Synthesis and Characterization of MoSe2 Nanoscrolls via Pulsed Laser Ablation in Deep Eutectic Solvents

2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

Facile phase transition engineering of MoS<sub>2</sub> for electrochemical hydrogen evolution

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

Metal-agglomeration-suppressed growth of MoS2 and MoSe2 films with small sulfur and selenium molecules for high mobility field effect transistor applications

Synthesis and characterization of Mo and W compounds for disulfide materials

High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS 2 Matrix

High phase-purity 1T′-MoS 2 - and 1T′-MoSe 2 -layered crystals

Supercritical CO2‐Assisted Reverse‐Micelle‐Induced Solution‐Phase Fabrication of Two‐Dimensional Metallic 1t‐mos2 and 1T‐WS2

A General Strategy to Stabilize the 1T-MoS2 by Using MXene Heterostructures and Unlock Its Hydrogen Evolution Reaction Capabilities

Atomic-scale description of 2D Janus MoSO and MoSeO formation: oxidation patterns and band-gap engineering

Annealing Temperature Effect on the Surface Properties of the MoSe Thin Films