Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

High phase-purity 1T′-MoS 2 - and 1T′-MoSe 2 -layered crystals

High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Synthesis of MoX2 (X = Se or S) Monolayers with High-Concentration 1T′ Phase on 4H/fcc-Au Nanorods for Hydrogen Evolution

High Phase Purity of Large-Sized 1T'-Mos2 Monolayers with 2D Superconductivity.

High Phase‐Purity 1t‐mos2 Ultrathin Nanosheets by a Spatially Confined Template

General Bottom-Up Colloidal Synthesis of Nano-Monolayer Transition-Metal Dichalcogenides with High 1T′-Phase Purity

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

S-doping induced phase engineering of MoSe2 for hydrogen evolution reaction

Lattice -Mismatch-Induced Ultrastable 1T-Phase MoS2-Pd/Au for Plasmon-Enhanced Hydrogen Evolution

Scalable and controllable synthesis of 2D high-proportion 1T-phase MoS2

In-Plane Anisotropic Properties Of 1t '-Mos2 Layers

Metastable 1T′-phase group VIB transition metal dichalcogenide crystals

Defect Engineering-Driven Phase Structure Design of 2H@1T MoS2 for Electrochemical Hydrogen Evolution Reaction

Phase-Controlled Synthesis of 1T-Mose2/nise Heterostructure Nanowire Arrays Via Electronic Injection for Synergistically Enhanced Hydrogen Evolution

Direct and in situ growth of 1T′ MoS2 and 1T MoSe2 on electrochemically synthesized MXene as an electrocatalyst for hydrogen generation

Phase-dependent growth of Pt on MoS 2 for highly efficient H 2 evolution

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Engineering Single‐Layer Hollow Structure of Transition Metal Dichalcogenides with High 1T‐Phase Purity for Hydrogen Evolution Reaction

Targeted Synthesis of 2H‐ and 1t‐phase MoS2 Monolayers for Catalytic Hydrogen Evolution