Abstract:Two-dimensional (2-D) layered transition metal dichalcogenides, such as MoS2, WSe2, WS2 and MoSe2 have received a lot of attention recently due to their significant thermal, mechanical, electrical and optical properties. Molybdenum Disulfide (MoS2), one of the transition metal dichalcogenides of interest for 2-D electronic systems, exhibits not only good thermal stability and high melting point, but also excellent light absorption, fast photo-response and sizeable band gap properties. Therefore, these unique properties make MoS2 a promising material for various electronic devices, photodetectors, sensors and catalysis applications. Many techniques have been developed for the synthesis of MoS2 films on different substrates in recent years, such as pulsed laser deposition (PLD), chemical vapor deposition (CVD). However, very little is known about atomic layer deposition (ALD) synthesis of MoS2 films there are very only few references. ALD technique exhibits self-limiting atomic layer reactions in each introduced ALD cycle. It can accurately control film layer thickness stoichiometry, composition, uniformity, and sharp interface. Furthermore, ALD also can be used to deposit conformal film onto very complex structures. Here we report on a large-area synthesis of MoS2 films on native oxide covered and hydroxyl terminated Si substrates by using the Savannah 100 ALD system from Ultratech/Cambridge Nanotech. Molybdenum hexacarbonyl (Mo(CO)6) and dimethyldisulfide (CH3SSCH3, DMDS) are employed as the chemical ALD precursors for Molybdenum and Sulfur, respectively. Generally 20 sccm N2 was used as a carrier gas for the precursors. The growth temperature was set at 200, 230 and 250 oC. The crystal structure and chemical composition of WSe2 films were identified by using X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). The film morphology was characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The optical properties of ALD MoS2 films were analyzed by Raman spectroscopy and femtosecond transient absorption spectroscopy.

Synthesis of uniform two-dimensional MoS2 films via thermal evaporation

Synthesis of Uniform Two-Dimensional MoS 2 Films Via Thermal Evaporation

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

Low-thermal-budget synthesis of monolayer MoS2

(Invited) Overview of ALD Synthesized MoS2 Thin Films

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

High-mobility patternable MoS2 percolating nanofilms

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Chemical vapor deposition growth and transport properties of MoS2–2H thin layers using molybdenum and sulfur as precursors

Mo Doping Assisting the CVD Synthesis of Size-Controlled, Uniformly Distributed Single-Layer MoS 2 on Rutile TiO 2 (110)

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Molybdenum-based two-dimensional materials: Synthesis, dispersion, exfoliation and thin film deposition

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Space-confined and uniform growth of 2D MoS2 flakes