Abstract:Abstract Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits (IC). Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials center on merging the unidirectionally aligned different size domains. However, the imperfectly merged area with translational lattice brings about high defect density and low device uniformity, which restricts the application of 2D materials. Here, we take the lead in establishing the 2D Czochralski method that can rapidly grow wafer-scale, single-crystal MoS2 with no grain boundaries. The method relies on a liquid-liquid interface spreading mechanism, which eventually realizes the Czochralski method in 2D materials growth. Specifically, a 2D intermediate liquid (Na2Mo2O7) film is formed through a eutectic reaction on an atomically smooth surface before sulfurization, leading to an ultralow nucleation density, an ultrafast crystallization rate (75 μm s-1), and thus producing large single-crystal MoS2 with the record domain size larger than 1.5 cm. Meanwhile, the 2D Czochralski method produces an ultra-clean, fast, and high-quality transfer process facilitated by the significantly reduced adhesion between the MoS2 crystal and the atomically smooth substrate. The obtained MoS2 large single-crystal shows superb uniformity and high quality with an ultralow defect density of 2.9×1012 cm-2, a high mobility of 105.4 cm2 V-1 s-1, and a saturation current of 443.8 μA μm-1 in the short-channel devices. A statistical analysis of 192 field-effect transistors within a centimeter-scale domain showed a 96.4% device yield and a 15.9% variation in mobility with a minimal variation of 15.9%, positioning itself as an advanced standard monolayer MoS2 device. This 2D Czochralski method provides fruitful implications for fabricating high-quality and scalable 2D semiconductor materials and devices.

Space-confined and uniform growth of 2D MoS2 flakes

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Controlled Growth Of High Spatial Uniformity Of Monolayer Single Crystal Mos2

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS 2 Films

Fast and large-area growth of uniform MoS2 monolayers on molybdenum foils.

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2

Synthesis of Single-Crystalline Molybdenum Disulfide on Molybdenum Films Aided with NaCl Solution Treatment

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

A Controllable Synthesis of Uniform MoS2 Monolayers on Annealed Molybdenum Foils

Two-dimensional Czochralski growth of single-crystal MoS2

Foams‐to‐Films: A Facile Approach Towards Space‐Confined CVD Growth of MoS2

Two-step fabrication of large-scale MoS2 hollow flakes

MoS2 Surface Structure Tailoring Via Carbonaceous Promoter.

Controllable Synthesis of MoS2 Nanostructures from Monolayer Flakes, Few-Layer Pyramids to Multilayer Blocks by Catalyst-Assisted Thermal Evaporation

Na-assisted space-confining method for rapid growth of large-domain-size monolayer MoS2 on SiO2

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Controllable Growth of Large–Size Crystalline MoS 2 and Resist-Free Transfer Assisted with a Cu Thin Film