Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Promotion of Mo-based Ionic Crystal Precursor for MoS2 Wafer Growth

Large Lattice Mismatch of Nanocomposite Coating: In-situ Establishment of MoS2 by Precursor and Desulfurization Reaction

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Experimental and theoretical investigation on pre-deposited precursor as growth sites for monolayer MoS 2 growth by supercritical fluid deposition

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

Space-confined and uniform growth of 2D MoS2 flakes

Effect of different precursors on CVD growth of molybdenum disulfide

High-quality, large-grain MoS2 films grown on 100 mm sapphire substrates using a novel molybdenum precursor

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition