Abstract:Properties of unintentionally-doped GaN re-grown on molecular beam epitaxy grown AlN/Sapphire templates by metal organic vapor phase epitaxy (MOVPE) are studied in this article. X-ray diffraction (XRD), transmission electron microscope (TEM), and atomic force microscope are used to investigate the influence of the crystal quality and surface morphology of AlN on the GaN. It is found that when surface roughness of AlN is small, the GaN has a full width at half maximum (FWHM) values of XRD rocking curves (200—300 and 400—500 arcsec for (002) and (102) plane ω-scan, respectively) and surface roughness (0.1—0.2 nm), which are comparable to those grown on sapphire substrates by using "two-step" method, although the FWHMs of (102) plane XRD ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN.

Spatial Distribution of Crystalline Quality in N-Type Gan Grown on Patterned Sapphire Substrate

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Dislocation generation mechanism analysis of GaN grown on patterned sapphire substrate

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Gan Grown on Ain/Sapphire Templates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Influence of Pillar- and Hole- Patterned Sapphire Substrates on Movpe Grown Gan Bulk and Led Structures

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Influence of low-V/III intermediate layer on GaN grown on patterned sapphire substrate by MOVPE