Abstract:Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due to the advantages of stability, low cost, high mechanical strength, as well as mature fabrication technology. However, realization of efficient LEDs grown on sapphire substrate is impeded by high density of defects in epilayers and low light extraction efficiency. The emergence of patterned sapphire substrate (PSS) turns out to be a promising and effective technology to overcome these problems and enhance the LED performances. In this review, we first introduce the background and recent advances of PSS applied in III-nitride visible and ultraviolet LEDs are. Then, we summarize the fabrication methods of PSS, together with novel methods to define nanometre-scale patterned structures. We further demonstrate the effect of PSS that contributes to reduce the threading dislocation density (TDD) of epilayers in detail. Meanwhile, mechanism of light extraction efficiency enhancement by adopting PSS is presented based on numerical analysis. Next, we explore the influence of PSS structural parameters (e.g. pattern size, pattern shape and aspect ratio) on LED performances, spanning from visible to deep ultraviolet UV emission region. Finally, challenges and potential prospects in PSS for future LED development are proposed and forecasted as well.

Influence of Pillar- and Hole- Patterned Sapphire Substrates on Movpe Grown Gan Bulk and Led Structures

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

Enhanced Performance of InGaN Light-Emitting Diodes Via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Application of patterned sapphire substrate for III-nitride light-emitting diodes.

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate