Composition, Structure and Electrical Resistivity of ZnO<sub>1-x</sub> Films Deposited by RF Magnetron Sputtering under Various O<sub>2</sub>/Ar Gas Ratios

Yang Wang,Zhi Jian Peng,Qi Wang,Xiu Li Fu
DOI: https://doi.org/10.4028/www.scientific.net/kem.697.723
2016-01-01
Key Engineering Materials
Abstract:ZnO1-x thin films were deposited by RF magnetron sputtering on conducting silicon wafers at room temperature with ZnOn (n≤1) target under an atmosphere of O2/Ar ratio varying from 0 to 2.0. The correlation between composition, structure and electrical resistivity of the obtained films was investigated. X-ray diffraction analysis revealed that the prepared würtzite ZnO1-x films had c-axis preferential growth orientation. When the O2/Ar ratio was lower than 0.5, the main form of defects in the films was oxygen vacancy; when it was 0.5, the composition of the film approached to the stoichiometric ZnO and had the least number of defects; after that, the main type of defects in the films was interstitial zinc. Thus, with increasing O2/Ar ratio, the electrical resistivity of the films increased first and then decreased.
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