Unintentionally Doped High Resistivity GaN Layers with an InGaN Interlayer Grown by MOCVD

Jianxun Liu,Hongwei Liang,Binghui Li,Yang Liu,Xiaochuan Xia,Huolin Huang,Qasim Abbas Sandhu,Rensheng Shen,Yingmin Luo,Guotong Du

DOI: https://doi.org/10.1039/c6ra10696j

IF: 4.036

2016-01-01

RSC Advances

Abstract:A reproducible method to prepare unintentionally doped high-resistivity GaN without undesirable memory effects is demonstrated.

What problem does this paper attempt to address?

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Fu Chen,Shichuang Sun,Xuguang Deng,Kai Fu,Guohao Yu,Liang Song,Ronghui Hao,Yaming Fan,Yong Cai,Baoshun Zhang

DOI: https://doi.org/10.1063/1.4990099

IF: 1.697

2017-01-01

AIP Advances

Abstract:In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.
Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

Xiaoguang He,Degang Zhao,Desheng Jiang,Jianjun Zhu,Ping Chen,Zongshun Liu,Lingcong Le,Jing Yang,Xiaojing Li,Shuming Zhang,Hui Yang

DOI: https://doi.org/10.1116/1.4892786

2014-01-01

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Abstract:Unintentionally doped semi-insulating GaN films possessing a low dislocation density are grown via metalorganic vapor phase epitaxy on a sapphire substrate. The obtained electrical resistivity reaches 4.8 × .a8 Ω·cm, and the full width at half maximum of the x-ray diffraction rocking curves of the (002) and (102) planes is as low as 201.6 and 378.0 arcsec, respectively. The GaN films are grown at low pressure (LP) to introduce residual carbon and to compensate background donors. The dislocation density in these samples is significantly reduced by using a low V/III ratio in the initial epitaxial growth stage. It is also found that the resistivity of the LP-grown samples decrease when the residual carbon concentration is excessive, which is attributed to the self-compensation of carbon impurities. Therefore, the carbon concentration of LP-grown GaN should be carefully modulated to maintain its high resistivity.
High Resistivity GaN Film Grown by MOCVD

Cebao Fang,Xiaoliang Wang,Chao Liu,Guoxin Hu,Junxi Wang,Jianping Li,Cuimei Wang,Chengji Li,Yiping Zeng,Jinmin Li

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.z1.024

2005-01-01

Abstract:High resistivity unintentionally doped GaN films are grown on (0001) sapphire by metallorganic chemical vapor deposition (MOCVD). The surface morphology of the layer is measured by both atomic force microscopy and scanning electron microscopy. The film shows a mirror-like surface morphology (RMS 0.3 nm). The FWHM value of X-ray rocking curve is 5.22′, indicating that the single-cryatal GaN quality is well-crystallized. The resistivities at room temperature and 250°C are measured to be 6.6 × 108 Ω · cm and 106 Ω · cm by variable-temperature Hall measurement respectively.
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

haoran li,stacia keller,silvia h chan,jing lu,steven p denbaars,u k mishra

DOI: https://doi.org/10.1088/0268-1242/30/5/055015

IF: 2.048

2015-01-01

Semiconductor Science and Technology

Abstract:Thin AlN interlayers are widely used in (In,Al,Ga) N based high-electron-mobility transistors to improve the mobility of the two-dimensional electron gas forming at the GaN/(In,Al,Ga) N interface. AlN layers grown by metal-organic chemical vapor deposition, however, were recently shown to contain high amounts of gallium caused by carry over reactions, resulting in AlxGa1-xN layers with x similar to 0.5 under typical deposition conditions. By modifying the AlN growth conditions in this study, layers with an Al mole fraction up to 0.78 were obtained. The unintentional Ga incorporation had a negligible effect on the electronic properties of GaN/AlN/AlGaN structures with nominally 0.7 nm thick AlN interlayer and sheet carrier densities in the order of 1 x 10(13) cm(-3). It resulted, however, in low electron mobility values for samples with thicker nominal AlN layers and/or higher sheet carrier densities.
High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Yang Wang,Gaoqiang Deng,Jie Ji,Haotian Ma,Shixu Yang,Jiaqi Yu,Yunfei Niu,Yusen Wang,Chao Lu,Yang Liu,Ke Tang,Wei Guo,Baolin Zhang,Yuantao Zhang

DOI: https://doi.org/10.1063/5.0063784

IF: 1.697

2021-01-01

AIP Advances

Abstract:Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices.
Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

X. G. He,D. G. Zhao,D. S. Jiang,Z. S. Liu,P. Chen,L. C. Le,J. Yang,X. J. Li,S. M. Zhang,J. J. Zhu,H. Wang,H. Yang

DOI: https://doi.org/10.1016/j.tsf.2014.05.045

IF: 2.1

2014-01-01

Thin Solid Films

Abstract:GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH3) flux, growth temperature, trimethyl-gallium flux and H2 flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0×109Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An AlxGa1−xN/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815cm2/Vs.
Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Qingjun Xu,Shiying Zhang,Bin Liu,Tao,Zili Xie,Xiangqian Xiu,Dunjun Chen,Peng Chen,Ping Han,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1016/j.spmi.2018.04.053

IF: 3.22

2018-01-01

Superlattices and Microstructures

Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.
Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Xiaomin Zhang,Yanjie Wang,Ziwen Yang,Hui Liu,Weihua Chen,Li Ding,Rui Li,Yang Zhi‐Jian,Guoyi Zhang,Hu Xiaodong

2008-01-01

Journal of Semiconductors

Abstract:p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.
Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Hanghai Du,Zhihong Liu,Lu Hao,Weichuan Xing,Weihang Zhang,Hong Zhou,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1063/5.0100329

IF: 4

2022-01-01

Applied Physics Letters

Abstract:A low ohmic contact resistance (Rc) is a challenge for an AlGaN/GaN heterostructure with a high Al-composition barrier, which is highly desired to further push the performance of GaN transistors. In this Letter, an effective ohmic contact technique with an in situ SiNx layer inserted between the conventional Ti/Al/Ni/Au metal stack and the III-nitride was proposed and the inside physical mechanisms were investigated for an Al0.65Ga0.35N/GaN heterostructure. The fabricated ohmic contact has a low Rc of 0.17 Ω·mm and a specific contact resistivity value (ρc) of 8.45 × 10−7 Ω·cm2, which is obviously improved compared with the Rc of 0.32 Ω·mm and ρc of 2.84 × 10−6 Ω·cm2 without in situ SiNx inserted. The strong temperature dependency of ρc with in situ SiNx insertion shows that the dominant current transport mechanism is the thermionic field emission. Transmission electron microscopy and energy dispersive x-ray spectroscopy analyses suggest that the enhanced ohmic contact is due to the possible formation of low-work function silicides and more TiN alloys during annealing.
High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Danni Chen,Jing Ning,Dong Wang,Boyu Wang,Jianglin Zhao,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1007/s40843-022-2320-8

2023-02-13

Science China Materials

Abstract:GaN on graphene/Al 2 O 3 substrates grown via van der Waals epitaxy compensates for the deficiencies and defects caused by metal-organic chemical vapor deposition (MOCVD) on substrates with significant mismatches to GaN. However, the absence of dangling bonds on graphene leads to insufficient nucleation sites; hence, a thin layer of AlN or ZnO nanowalls should be deposited on graphene as an intermediate layer. In this work, high-quality GaN crystals with a low biaxial compressive stress of 0.023 GPa and low screw dislocation density of 9.76 × 10 7 cm −2 were successfully synthesized by MOCVD on nitrogen-doped graphene without a buffer layer. First-principles calculations demonstrated significant improvement in the adsorption energy of the Ga atom on the surface of nitrogen-doped graphene compared with that of pristine graphene, in agreement with the experimental observations of nucleation. In most cases, GaN films were obtained by forming C—Ga—N and N—Ga—N configurations via atomic nitrogen pretreatment on monolayer graphene. Therefore, it is hoped that the efficient method of atomic modulation of high-quality GaN films grown on nitrogen-doped graphene via interface manipulation used in this work will promote the industrial development of innovative semiconductor devices.

materials science, multidisciplinary
Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

CB Fang,XL Wang,GX Hu,JX Wang,CM Wang,JM Li

IF: 4.632

2006-01-01

Journal of Rare Earths

Abstract:High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Jiaming Wang,Mingxing Wang,Fujun Xu,Baiyin Liu,Jing Lang,Na Zhang,Xiangning Kang,Zhixin Qin,Xuelin Yang,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1038/s41377-022-00753-4

2022-03-24

Light: Science and Applications

Abstract:Abstract Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10 18 cm −3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.
Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion

Ruixiang Hou,Xin Fang,Lei Li,Shuti Li,Weidong Song,Xixi Xie,Ziang Xie,Wanjing Xu,Shuan Pan,Dan Li,Chijie Xiao,G. G. Qin

DOI: https://doi.org/10.1007/s00339-017-0989-z

2017-01-01

Applied Physics A

Abstract:It is demonstrated by use of the secondary ion mass spectroscopy (SIMS) some impurities, including Si, Mg and Ca, can be doped into GaN films with depths of ten nanometer and quite high surface densities in plasma without any external bias at room-temperature (RT). The physical mechanism of plasma doping without any external bias (PDWOEB) is RT diffusion stimulated by the plasma, which is very different from that of the plasma doping method with an external bias, which was called plasma immersion ion implantation in literature, whose physical mechanism is low energy ion implantation. Stimulated by a plasma with power of 750 W in 2 min, the RT diffusion coefficients of Si, Mg and Ca in GaN obtained by fitting the complementary error function distribution with their SIMS concentration distributions are 1.3E−15, 1.9E−16 and 1.2E−16 cm 2 /s, respectively. The RT diffusion coefficients of Si and Mg have been enhanced 18 and 22 orders of magnitude, respectively, compared with the RT extrapolation values of the high temperature diffusion coefficients reported in literature.
High-Resistivity Gan Homoepitaxial Layer Studied by Schottky Diode Structure

H. Shi,H. Lu,D. Chen,R. Zhang,Y. Zheng

DOI: https://doi.org/10.1049/el.2009.0401

2009-01-01

Electronics Letters

Abstract:An undoped GaN homoepitaxial layer has been grown by metal-organic chemical vapour deposition on a conductive free-standing bulk GaN substrate. The dislocation density of the homoepitaxial layer characterised by cathodoluminescence mapping technique is about 6 x 10(6) cm(-2). By fabricating a vertical Schottky diode structure, the resistivity of the homoepitaxial layer is estimated in the order of 10(9) Omega cm at room temperature. This study indicates that highly-resistive GaN can be produced by a homoepitaxy approach.
Deep Level Centers in Carbon-Doped High Resistivity GaN

huan cui,l w lu,ling sang,bai he chen,zhi wei he,bo shen,x l yang

DOI: https://doi.org/10.4028/www.scientific.net/AMR.997.492

2014-01-01

Advanced Materials Research

Abstract:The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.
Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

K. R. Wang,L. W. Tu,S. J. Lin,Y. L. Chen,Z. W. Jiang,M. Chen,C. L. Hsiao,K. H. Cheng,J. W. Yeh,S. K. Chen

DOI: https://doi.org/10.1002/pssb.200565449

2006-01-01

physica status solidi (b)

Abstract:Unintentionally doped InN has been grown onto an atomically flat AlN intermediate layer on top of the Si(111) substrate using plasma‐assisted molecular beam epitaxy (PA‐MBE). Though there are lots of micrometer‐size indium droplets randomly distributed on the top of the surface, the highest electron mobility of this InN thin film measured at room temperature by van der Pauw method is still higher than 1000 cm2/V s with a carrier concentration of 5–8.9 × 1018 cm–3. A symmetrical X‐ray rocking curve is measured and the full‐width‐at‐half‐maximum (FWHM) of this sample is 1089 arcsec. In the meantime, the threading dislocation (TD) density of this material is estimated to around 9.8 × 108 cm–2 – 7.5 × 109 cm–2 depending on the probing regions that are studied by the etching technique and field‐emission scanning electron microscopy (FE‐SEM). (2 × 1) in situ reflection high‐energy electron diffraction (RHEED) patterns show that this sample is grown under In‐rich environment with possible In‐terminated surface. From the FE‐SEM pictures which were taken from the samples after 10 minutes etching in hydrochloride, the surface morphology shows In‐polarity‐like patterns that coincide with those procured in RHEED. To select and grow a high‐quality laminated AlN as intermediate layer is believed to be the major step in obtaining this high electron mobility InN thin film on Si substrate. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Haidi Wu,Jing Ning,Yanqing Jia,Chaochao Yan,Yu Zeng,Haibin Guo,Jianglin Zhao,Yanbo Wang,Jincheng Zhang,Dong Wang,Yue Hao

DOI: https://doi.org/10.1021/acs.cgd.1c00728

2021-09-02

Abstract:In the van der Waals epitaxy of III-nitride semiconductor materials, graphene plays an increasingly important role. In this work, to improve the quality of the gallium nitride (GaN) film on sapphire, we innovatively propose a composite insertion layer of graphene/silica nanospheres (G/S-n). The G/S-n composite insertion layer successfully realizes van der Waals self-assembly for the silica nanospheres. The G/S-n buffer layer can effectively block threading dislocations during the growth of GaN materials, and experimental results show that it significantly enhances the quality of the GaN film. The screw- and edge-dislocation densities are reduced from 1.75 × 108 to 7.81 × 107 cm2 and from 8.66 × 108 to 5.84 × 108 cm2, respectively. This work provides a foundation for future research into the van der Waals epitaxy of nitrides.This article has not yet been cited by other publications.

chemistry, multidisciplinary,materials science,crystallography
Doping and compensation in heavily Mg doped Al-rich AlGaN films

Pegah Bagheri,Andrew Klump,Shun Washiyama,M. Hayden Breckenridge,Ji Hyun Kim,Yan Guan,Dolar Khachariya,Cristyan Quiñones-García,Biplab Sarkar,Shashwat Rathkanthiwar,Pramod Reddy,Seiji Mita,Ronny Kirste,Ramón Collazo,Zlatko Sitar

DOI: https://doi.org/10.1063/5.0082992

IF: 4

2022-02-21

Applied Physics Letters

Abstract:Record low resistivities of 10 and 30 Ω cm and room-temperature free hole concentrations as high as 3 × 10 18 cm −3 were achieved in bulk doping of Mg in Al 0.6 Ga 0.4 N films grown on AlN single crystalline wafer and sapphire. The highly conductive films exhibited a low ionization energy of 50 meV and impurity band conduction. Both high Mg concentration (>2 × 10 19 cm −3 ) and low compensation were required to achieve impurity band conduction and high p-type conductivity. The formation of V N -related compensators was actively suppressed by chemical potential control during the deposition process. This work overcomes previous limitations in p-type aluminum gallium nitride (p-AlGaN) and offers a technologically viable solution to high p-conductivity in AlGaN and AlN.

physics, applied
Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Yue Xu,Xuelin Yang,Peng Zhang,Xingzhong Cao,Yao Chen,Shiping Guo,Shan Wu,Jie Zhang,Yuxia Feng,Fujun Xu,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.7567/1882-0786/ab1c19

IF: 2.819

2019-01-01

Applied Physics Express

Abstract:We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.
Fluoride monolayer doping in GaN/AlGaN/GaN semiconductor

Linh Chi T. Cao,Shu Han Hsu,Chun-Lin Chu

DOI: https://doi.org/10.1557/s43580-023-00582-6

2023-05-09

MRS Advances

Abstract:With the evolution of the modern world, the demand for broadband network systems has been gradually grabbing significant attention in the high-tech industry. To meet the future requirements of intelligent life, unmanned devices and vehicles, the standard of six-generation (6G) wireless system is developing to integrate superior functions of low-orbit satellites and 5G cellular communication systems. For 6G wireless technology, the wide bandgap and high-electron-mobility transistors of GaN/AlGaN/GaN (HEMTs) are emerging as excellent candidates due to their high-power-handling capabilities and ability to small-scale fabrication to obtain minor and affordable chip size. However, the conventional GaN/AlGaN/GaN HEMTs, such as depletion-mode transistors with a negative threshold voltage (Vth), can limit the device application and their stability against temperature. Therefore, it is crucial to convert the gate-controlled channel from depletion- to enhancement mode, which can be achieved by introducing fluorine atoms into the channel. Herein, this study presents a method that can accurately control threshold voltages of GaN/AlGaN/GaN using monolayer doping with 1H,1H,2H,2H-Perfluorooctyltriethoxysilane (POTS), a fluoride-containing molecule. This technique can prevent lattice damage from conventional methods such as ion implantation or plasma. This can open more process possibilities for next-generation high mobility GaN/AlGaN/GaN FinFETS to serve future-related 6G communication and low-orbit satellite circuit development.Graphical Abstract

Unintentionally Doped High Resistivity GaN Layers with an InGaN Interlayer Grown by MOCVD

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

High Resistivity GaN Film Grown by MOCVD

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion

High-Resistivity Gan Homoepitaxial Layer Studied by Schottky Diode Structure

Deep Level Centers in Carbon-Doped High Resistivity GaN

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Fluoride monolayer doping in GaN/AlGaN/GaN semiconductor