Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Growth and Characterization of Ge on GaN by LPCVD

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Gan Grown on Ain/Sapphire Templates

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Study of InGaN Films Grown by MOCVD

Growth and Characterization of M Plane GaN Material by MOCVD

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Growth and Characterization of Bulk GaN by Ga Vapor Transport

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy