Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

High-resolution X-ray Diffraction and Micro-Raman Scattering Studies of Ge(:Ga) Thin Films Grown on GaAs (001) Substrates by MOCVD

MOCVD Ge-on-GaAs and Its P-Type Doping Via Incorporating Ga Atoms

Growth and Structure of Cr Thin Films on GaAs(001)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

High-resolution X-Ray Diffraction Studies of Highly Curved GaN Layers Prepared by Hydride Vapor Phase Epitaxy

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(0 0 1) substrates

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Thickness Measurement of GaN Films by X-ray Diffraction

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

X-ray Diffraction Studies on AlGaN/GaN Heterostructures

MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES

Optical property studies of GaN films grown by MOCVD

Synchrotron-radiation Study of the Electronic Structure of Fcc Mn Thin Films Grown on a GaAs(001) Surface.