Abstract:A degradation of crystalline silicon surface passivation provided by aluminum oxide (Al2O3) is generally observed after plasma processes, e.g., deposition of amorphous silicon nitride. To minimize such detrimental effect, a better understanding of the interaction between plasma species and the Al2O3 layer is required. Using in situ photoluminescence, the passivation quality of as‐deposited and annealed crystalline silicon wafers coated with Al2O3 grown by atomic layer deposition is characterized in real time during argon‐hydrogen plasma exposure. The photoluminescence intensity of as‐deposited samples instantly steps up after the plasma ignition, and then it gradually decreases as a function of plasma exposure time. However, only degradation of photoluminescence signal can be found if the samples are annealed prior to the plasma treatment. The interaction between vacuum UV light from plasma and different types of chemical bonds in the Al2O3 layer is proposed to explain the obtained results. Understanding the mechanisms and root cause leading to different behavior between as‐deposited and annealed samples under plasma exposure is a first step toward redesigning the process flow for better surface passivation. Using in situ photoluminescence, the passivation of as‐deposited and annealed Al2O3 coated c–Si is characterized during argon‐hydrogen plasma exposure. An increase of PL intensity, followed by a gradual degradation is observed on as‐deposited samples, while only degradation is observed on annealed ones. The interaction between UV‐plasma emission and different chemical bonds at Al2O3/c–Si interface is proposed to explain the results.

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

ation of surface passivation on porous silicon carbide using atomic layer deposited Al 2 O 3

Improved Passivation Depth of Porous Fluorescent 6H-Sic with Si/C Faces Using Atomic Layer Deposition

Surface Passivation of Nano-Textured Fluorescent Sic by Atomic Layer Deposited Tio2

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Fabrication and Surface Passivation of Porous 6H-Sic by Atomic Layer Deposited Films

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Effective Optimization of Surface Passivation on Porous Silicon Carbide Using Atomic Layer Deposited Al2O3

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Improved Device Performances Based on Si Quantum Dot/si Nanowire Hetero-Structures by Inserting an Al2O3 Thin Layer

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

The impacts of SiO 2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs

Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

Luminescent Properties and Microstructure of SiC Doped AlON: Eu2+ Phosphors

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition