Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Applications of molecular absorption spectrum on semiconductor CVD growth

In-Situ Monitoring Technology for Growth of III Nitrides by Metal Organic Chemical Vapor Deposition

Vapor Growth of III Nitrides

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Infrared Absorbance of SiN_x and SiC

Correlation Between the Infrared Reflectance and Microstructure of Thin Gallium Nitride Films Grown on Silicon Substrates

Infrared Absorbance of SiNx and SiC

In situ thickness monitoring for MBE-VCSEL growth by infrared thermometer

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Mid-infrared semiconductor light sources, detectors and its applications

Role of nitrogen source flow on the growth of 2D GaN crystals

Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Controllable Growth of Gallium Oxide Nanowires by Chemical Vapor Deposition

In-situ Monitoring of PCVD Diamond Films Growth by Langmuir Probe and Optical Emission Spectroscopy

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Application of Spectrophotometry in the Process Parameters Determination of Compound Semiconductor Film

Infrared Absorption in SiGe/Si Multiple Quantum Wells

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga 2 O 3 films and the applications in ultraviolet photodetectors